GS74116A GSI [GSI Technology], GS74116A Datasheet - Page 4

• Manufacturer Part Number: GS74116A
• Description: 256K x 16 4Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

Recommended Operating Conditions
Note:
1.
2.
Capacitance
Notes:
1.
2.
DC I/O Pin Characteristics
Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output High Voltage
Output Low Voltage
Supply Voltage for -7/-8/-10/-12
Output Leakage
Input Leakage
Input overshoot voltage should be less than V
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Tested at T
These parameters are sampled and are not 100% tested.
Parameter
Output Capacitance
Input Capacitance
Current
Current
Ambient Temperature,
Ambient Temperature,
Parameter
Commercial Range
Input High Voltage
Input Low Voltage
Industrial Range
Parameter
A
= 25°C, f = 1 MHz
Symbol
V
V
I
I
LO
OH
IL
OL
Symbol
C
C
OUT
IN
Symbol
V
V
T
V
T
DD
Ac
IH
A
IL
I
Test Conditions
DD
V
V
Output High Z
OUT
I
I
+2 V and not exceed 20 ns.
IN
OH
LO
Test Condition
= 0 to V
= +4 mA
= 0 to V
= –4 mA
V
Min
V
–0.3
–40
OUT
3.0
2.0
IN
0
4/14
= 0 V
DD
= 0 V
DD
Typ
3.3
—
—
—
—
– 1 uA
–1 uA
Min
2.4
—
Max
5
7
V
DD
Max
3.6
0.8
70
85
+0.3
Unit
pF
pF
Max
0.4 V
1 uA
1 uA
—
Unit
o
o
V
V
V
C
C
© 2001, Giga Semiconductor, Inc.
GS74116ATP/J/X