GS816018T-225 GSI [GSI Technology], GS816018T-225 Datasheet - Page 15

• Manufacturer Part Number: GS816018T-225
• Description: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
• Manufacturer: GSI [GSI Technology]

AC Test Conditions
DC Electrical Characteristics
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
3.
Input Leakage Current
(except mode pins)
ZZ Input Current
FT Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig.
1 unless otherwise noted.
Device is deselected as defined by the Truth Table.
Parameter
Parameter
DQ
Conditions
V
Symbol
DD
V
V
V
1 V/ns
V
Fig. 1
V
0.2 V
I
I
I
DDQ
OH2
OH3
I
IN1
IN2
OL
DD
IL
OL
– 0.2 V
/2
/2
* Distributed Test Jig Capacitance
Output Load 1
15/28
V
DDQ/2
Output Disable, V
I
I
OH
OH
50
= –8 mA, V
= –8 mA, V
Test Conditions
V
0 V V
V
0 V V
GS816018/32/36T-250/225/200/166/150/133
V
DD
DD
IN
I
OL
= 0 to V
= 8 mA
V
V
30pF
IN
IN
IN
IN
DDQ
DDQ
OUT
DD
*
V
= 2.375 V
= 3.135 V
V
V
V
= 0 to V
IH
IH
IL
IL
DD
© 1999, Giga Semiconductor, Inc.
–100 uA
–1 uA
–1 uA
–1 uA
–1 uA
–1 uA
1.7 V
2.4 V
Min
—
Preliminary
100 uA
Max
0.4 V
1 uA
1 uA
1 uA
1 uA
1 uA
—
—