HY27SA081G1M HYNIX [Hynix Semiconductor], HY27SA081G1M Datasheet - Page 29

• Manufacturer Part Number: HY27SA081G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: HYNIX [Hynix Semiconductor]

Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device)
Rev 0.5 / Oct. 2004
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ALLRL1
ALLRL2
BHRL
BLBH1
BLBH2
BLBH3
BLBH4
CLLRL
DZRL
EHBH
EHEL
EHQZ
ELQV
RHBL
RHRL
RHQZ
RLRH
RLRL
RLQV
WHBH
Symbol
Alt.
Symbol
t
t
READID
t
t
t
t
t
t
t
REA
t
t
t
t
t
PROG
t
t
t
CEA
RB
REH
RHZ
RP
RC
t
BERS
t
t
CEH
CHZ
AR1
AR2
RST
CLR
CRY
R
t
RR
IR
R
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Ready/Busy High (CE intercepted read)
Chip Enable High to Chip Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Ready/Busy Low
Read Enable High to
Read Enable Low
Read Enable High to
Output Hi-Z
Read Enable Low to
Read Enable High
Read Enable Low to
Read Enable Low
Read Enable Low to
Output Valid
Write Enable High to Ready/Busy High
Parameter
Read Electronic Signature
Read cycle
1Gb : Dual Die
Program Busy time
Erase Busy time
Reset Busy time, during ready
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
Read Enable High Hold time
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Read Enable Pulse Width
Read Enable Access time
Read ES
Read Cycle time
(2)
(3)
Access time
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Device
3.3V
10
50
12
45
15
40
60
35
45
12
70+tr
500
500
100
100
10
15
30
20
10
20
3
5
5
0
(1)
Device
1.8V
25
80
15
75
20
60
80
60
60
15
Unit
ms
ns
us
us
us
us
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
us
us
ns
ns
ns
ns
ns
29