HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 25

• Manufacturer Part Number: HY27UG088GDM
• Description: 8Gbit (1Gx8bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 0.6 / Dec. 2006
IO
DEVICE IDENTIFIER CYCLE
0
1
2
3
4
5
6
7
HY27UG088GDM
HY27UG088G5M
Part Number
Write Protect
Ready/Busy
Ready/Busy
Program
Pass / Fail
Page
NA
NA
NA
NA
2nd
3rd
4th
1st
Write Protect
Voltage
Ready/Busy
Ready/Busy
Pass / Fail
3.3V
3.3V
Block
Erase
NA
NA
NA
NA
Internal chip number, cell Type, Number of Simultaneously Programmed pages.
Table 14: Device Identifier Coding
Width
Table 13: Status Register Coding
Bus
x8
x8
Table 15: Read ID Data Table
Pass / Fail (N-1)
Cache Register
Pass / Fail (N)
Controller Bit
Write Protect
Program
Cache
P/E/R
Free
NA
NA
NA
(Manufacture Code)
Page Size, Block Size, Spare Size, Organization
1st cycle
ADh
ADh
Write Protect
Ready/Busy
Ready/Busy
Read
NA
NA
NA
NA
NA
Manufacturer Code
Device Identifier
DESCRIPTION
8Gbit (1Gx8bit) NAND Flash
HY27UG088G(5/D)M Series
(Device Code)
Controller Bit
Ready/Busy
2nd cycle
Cache
Read
P/E/R
DCh
DCh
(Only for Cache Program,
3rd Cycle 4th Cycle
Busy: ‘0’ Ready’: ‘1’
Active: ‘0’ Idle: ‘1’
Not Protected: ‘1’
Pass: ‘0’ Fail: ‘1’
Pass: ‘0’ Fail: ‘1’
else Don’t care)
80h
80h
Protected: ‘0’
CODING
-
-
-
95h
95h
25