FOD814_06 FAIRCHILD [Fairchild Semiconductor], FOD814_06 Datasheet - Page 3
FOD814_06
Manufacturer Part Number
FOD814_06
Description
4-Pin High Operating Temperature Phototransistor Optocouplers
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FOD814_06.pdf
(12 pages)
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics (T
*Typical values at T
EMITTER
DETECTOR
Symbol DC Characteristic
V
Symbol Parameter
BV
BV
CE (sat)
CTR
I
CEO
V
I
C
CEO
ECO
R
F
t
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Forward Voltage
Reverse Leakage Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
A
= 25°C
A
FOD814A
FOD617A
FOD617B
FOD617C
FOD617D
FOD617A
FOD617B
FOD617C
FOD617D
FOD817A
FOD817B
FOD817C
FOD817D
= 25°C Unless otherwise specified.)
FOD814
FOD817
FOD814
FOD617
FOD817
Device
(T
A
= 25°C Unless otherwise specified.)
I
I
I
I
I
I
I
F
F
F
F
F
F
F
FOD617C/D
FOD617A/B
= ±1mA, V
= 10mA, V
= 1mA, V
= 5mA, V
= ±20mA, I
= 10mA, I
= 20mA, I
FOD814
FOD617
FOD817
FOD617
FOD817
FOD814
FOD617
FOD817
FOD814
FOD817
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
Device
Test Conditions
CE
CE
C
C
3
CE
CE
C
= 2.5mA
= 1mA
= 5V
= 5V
= 1mA
= 5V
= 5V
I
I
I
V
V
V = 0, f = 1kHz
V = 0, f = 1kHz
V = 0, f = 1kHz
V
V
V
V
I
I
I
I
I
I
Test Conditions
F
F
F
C
C
C
E
E
E
R
R
CE
CE
CE
CE
= ±20mA
= 60mA
= 20mA
= 10µA, I
= 10µA, I
= 10µA, I
= 0.1mA, I
= 100µA, I
= 0.1mA, I
(1)
(1)
= 6.0V
= 4.0V
(1)
(1)
= 20V, I
= 10V, I
= 10V, I
= 20V, I
F
F
F
F
F
F
F
F
F
F
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
Min.
70
70
70
–
–
–
–
–
–
–
–
–
–
–
–
6
7
6
Min.
100
160
130
200
300
20
50
40
63
13
22
34
56
50
80
–
–
–
Typ.*
0.001
1.35
1.2
1.2
50
30
30
–
–
1
1
–
–
–
–
–
–
–
Typ.*
0.1
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max.
1.65
250
250
250
100
100
100
1.4
1.4
10
10
50
–
–
–
–
–
–
Max.
www.fairchildsemi.com
300
150
125
200
320
600
160
260
400
600
0.2
0.4
0.2
80
–
–
–
–
Unit
µA
nA
pF
V
V
V
Unit
%
V