EVAL-ADF9010EBZ AD [Analog Devices], EVAL-ADF9010EBZ Datasheet - Page 7

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EVAL-ADF9010EBZ

Manufacturer Part Number
EVAL-ADF9010EBZ
Description
900 MHz ISM Band Analog RF Front End
Manufacturer
AD [Analog Devices]
Datasheet
ABSOLUTE MAXIMUM RATINGS
T
Table 5.
Parameter
DV
RxV
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
Charge Pump Voltage to GND
REF
LO
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
LCSP θ
Reflow Soldering
1
GND = AGND = DGND = 0 V.
P
A
Industrial (B Version)
Peak Temperature
Time at Peak Temperature
to GND
EXT
DD
= 25°C unless otherwise noted.
DD
IN
, RxV
, LO
P to LO
, AV
JA
EXT
Thermal Impedance
DD
DD
1
P, LO
to DV
, AV
EXT
N
EXT
DD
DD
N to GND
to GND
1
1
1
1
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +5.5 V
−0.3 V to V
−0.3 V to AV
−0.3 V to V
−0.3 V to V
±320 mV
−40°C to +85°C
−65°C to +150°C
150°C
26°C/W
260°C/W
40 sec
DD
P
DD
to GND
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
1
Rev. 0 | Page 7 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high-performance RF integrated circuit with an
ESD rating of <0.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The ADF9010 transistor count is 40,454 (CMOS) and 994
(bipolar).
ESD CAUTION
ADF9010

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