SM724 POLYFET [Polyfet RF Devices], SM724 Datasheet
SM724
Manufacturer Part Number
SM724
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer
POLYFET [Polyfet RF Devices]
Datasheet
1.SM724.pdf
(2 pages)
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Part Number:
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Manufacturer:
POLYFET
Quantity:
20 000
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Part Number:
SM72441MTX/NOPB
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Quantity:
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Quantity:
950
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
transistors designed specifically
General Description
SYMBOL
SYMBOL
Total
Device
Dissipation
"Polyfet" process features
Silicon VDMOS and LDMOS
Gps
VSWR
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Bvdss
190
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Watts
TM
Zero Bias Drain Current
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PARAMETER
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Junction to
Case Thermal
Resistance
polyfet rf devices
t
0.85 C/W
o
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200 C
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
o
-65 C to 150 C
Storage
Temperature
POLYFET RF DEVICES
MIN
MIN
o
1
10
40
180.0
220.0
38.00
o
TYP
TYP
75
0.20
14.0
5.2
60.0
DC Drain
Current
20:1
MAX
MAX
19.0
1
7
4.0
WATTS OUTPUT )
A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Mho
Amp
RF POWER
mA
dB
uA
pF
pF
pF
%
V
V
25 C )
HIGH EFFICIENCY, LINEAR
Drain to
Gate
Voltage
o
HIGH GAIN, LOW NOISE
TEST CONDITIONS
Idq =
Idq =
Idq = 0.80
TEST CONDITIONS
50
60.0
V
Vds =
Vds = 0V Vgs = 30V
Ids =
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
Ids =
Package Style
0.80
0.80
0.40
REVISION 09/25/2001
VDMOS
80.00
12.5
Watts
12.5
12.5
12.5
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Source
Voltage
50
Single Ended
10.00
V
TRANSISTOR
12.5
12.5
12.5
AM
A
SM724
V, F =
V, F =
V, F =
Gate to
Source
Voltage
20
175
175
175
V
MHz
MHz
MHz
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SM724 Summary of contents
Page 1
... Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 10.00 Amp Vgs = 20V, Vds = 10V 12.5 Vgs = 0V MHz pF Vds = 12.5 Vgs = 0V MHz Vds = pF 12.5 Vgs = 0V MHz Vds = pF REVISION 09/25/2001 SM724 TRANSISTOR AM Gate to Source Voltage 20 V 12.5 175 MHz 12.5 175 MHz 12.5 175 MHz ...
Page 2
... CURVE S1C 4 DIE VDS IN VOLTS vg=2v Vg=4v Vg=6v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SM724 14.00 13.00 12.00 Pout 11.00 10.00 Gain 9. 8. 100.00 10.00 1.00 0. vg=8v 0 Tolerance ...