BSM300GB120DN2 Eupec GmbH, BSM300GB120DN2 Datasheet

no-image

BSM300GB120DN2

Manufacturer Part Number

BSM300GB120DN2

Description

Manufacturer

Eupec GmbH

Datasheet

1.BSM300GB120DN2.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BSM300GB120DN2

Manufacturer:

SIEMENS

Quantity:

292

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BSM300GB120DN2

Manufacturer:

西门子

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM300GB120DN2

Quantity:

50

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BSM300GB120DN2N

Manufacturer:

EUPEC

Quantity:

25

Current page: 1 of 9
Download datasheet (189Kb)

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral der Diode

I

Isolations-Prüfspannung

insulation test voltage

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

Gate-Schwellenspannung

gate threshold voltage

Gateladung

gate charge

Eingangskapazität

input capacitance

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

prepared by: MOD-D2; Mark Münzer

approved by: SM TM; Wilhelm Rusche

IGBT-Module

IGBT-Modules

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Transistor / Transistor

Technische Information / Technical Information

2

t - value, Diode

T

T

T

t

T

t

V

RMS, f = 50 Hz, t = 1 min.

I

I

I

f = 1MHz,T

f = 1MHz,T

V

V

date of publication: 2003-01-29

revision: 3.0

BSM300GB120DLC

P

P

C

C

C

V

vj

C

C

C

R

GE

CE

= 1 ms, T

= 1 ms

GE

= 25°C, Transistor

= 300A, V

= 300A, V

= 12mA, V

=25°C

= 80 °C

= 25 °C

= 0V, t

= 0V, T

= 0V, V

= -15V...+15V

p

vj

vj

vj

= 10ms, T

C

GE

= 25°C, V

GE

GE

= 25°C,V

= 25°C,V

CE

= 80°C

= 20V, T

= 15V, T

= 15V, T

= V

http://store.iiic.cc/

GE

Vj

, T

CE

CE

CE

vj

= 125°C

vj

vj

= 1200V

vj

= 25V, V

= 25V, V

= 25°C

= 25°C

= 125°C

= 25°C

1 (9)

GE

GE

= 0V

= 0V

V

I

V

V

V

V

C,nom.

I

I

I

I

C

C

P

CRM

CE sat

GE(th)

Q

FRM

CES

GES

I

ISOL

CES

I

GES

I

2

C

ies

res

tot

F

G

t

min.

4,5

-

-

-

-

-

-

-

+/- 20V

1200

typ.

300

625

600

300

600

2,5

2,5

2,1

2,4

5,5

3,2

1,4

19

21

-

-

max.

400

2,6

2,9

6,5

5

-

-

-

DB_BSM300GB120DLC_3.0

k A

mA

kW

nA

kV

nF

nF

V

A

A

A

V

A

A

V

V

V

C

2

s

2003-01-29

Related parts for BSM300GB120DN2

Related keywords

BSM300GB120DN2 datasheet
BSM300GB120DN2 data sheet
BSM300GB120DN2 pdf datasheet
BSM300GB120DN2 component
BSM300GB120DN2 part
BSM300GB120DN2 distributor
BSM300GB120DN2 RoHS
BSM300GB120DN2 datasheet download