TE28F016B3BA110 Intel Corporation, TE28F016B3BA110 Datasheet

TE28F016B3BA110

Manufacturer Part Number

TE28F016B3BA110

Description

Manufacturer

Intel Corporation

Datasheets

1.TE28F016B3TA110.pdf (48 pages)

2.TE28F016B3BA110.pdf (58 pages)

3.TE28F016B3BA90.pdf (64 pages)

Specifications of TE28F016B3BA110

Case

TSOP40

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TE28F016B3BA110

Manufacturer:

INTEL

Quantity:

1 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TE28F016B3BA110

Manufacturer:

INTEL

Quantity:

1 400

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3 Volt Advanced Boot Block Flash

Memory

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

Product Features

The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 m

technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced

Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP

packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-

ball µBGA* packages. Additional information on this product family can be obtained by

accessing Intel’s website at: http://www.intel.com/design/flash.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Flexible SmartVoltage Technology

2.7 V or 1.65 V I/O Option

High Performance

Optimized Block Sizes

Block Locking

Low Power Consumption

Absolute Hardware-Protection

Extended Temperature Operation

Automated Program and Block Erase

— 2.7 V–3.6 V Read/Program/Erase

— 12 V V

— Reduces Overall System Power

— 2.7 V–3.6 V: 70 ns Max Access Time

— Eight 8-KB Blocks for Data,Top or

— Up to One Hundred Twenty-Seven 64-

— V

— 9 mA Typical Read Current

— V

— –40 °C to +85 °C

— Status Registers

Bottom Locations

KB Blocks for Code

-Level Control through WP#

= GND Option

Lockout Voltage

Fast Production Programming

Intel

Extended Cycling Capability

Automatic Power Savings Feature

Standard Surface Mount Packaging

Density and Footprint Upgradeable for

common package

ETOX™ VII (0.18

x8 not recommended for new designs

4-Mbit density not recommended for new

designs

— Flash Memory Manager

— System Interrupt Manager

— Supports Parameter Storage, Streaming

— Minimum 100,000 Block Erase Cycles

— Typical I

— 48-Ball CSP Packages

— 40- and 48-Lead TSOP Packages

— 4-, 8-, 16-, 32- and 64-Mbit Densities

— 28F160/320/640B3xC

— 4-, 8-, 16-, and 32-Mbit also exist on

Data (e.g., Voice)

Guaranteed

ETOX™ V (0.4

(0.25

Flash Data Integrator Software

Preliminary Datasheet

Flash Technology

CCS

after Bus Inactivity

Order Number: 290580-012

and/or ETOX ™ VI

Flash Technology

October 2000

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