M29F800AB70N1 STMicroelectronics, M29F800AB70N1 Datasheet

M29F800AB70N1

Manufacturer Part Number

M29F800AB70N1

Description

Manufacturer

STMicroelectronics

Datasheet

1.M29F800AB70N1.pdf (21 pages)

Specifications of M29F800AB70N1

Case

TSOP48

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

M29F800AB70N1

Manufacturer:

Company:

BOSTOCK HK LIMITED

Part Number:

M29F800AB70N1.

Manufacturer:

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January 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

SINGLE 5V 10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

ACCESS TIME: 70ns

PROGRAMMING TIME

– 8 s per Byte/Word typical

19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

TEMPORARY BLOCK UNPROTECTION

MODE

LOW POWER CONSUMPTION

– Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– M29F800AT Device Code: 00ECh

– M29F800AB Device Code: 0058h

Erase Suspend

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Figure 1. Logic Diagram

Single Supply Flash Memory

A0-A18

TSOP48 (N)

12 x 20mm

V CC

M29F800AT

M29F800AB

V SS

M29F800AB

M29F800AT

PRELIMINARY DATA

SO44 (M)

DQ0-DQ14

DQ15A–1

BYTE

AI02198B

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