F5019 Fuji Electric holdings CO.,Ltd, F5019 Datasheet
F5019
Manufacturer Part Number
F5019
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Specifications of F5019
Date_code
08+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
F5019
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
F5019-S-TE24R
Manufacturer:
FE
Quantity:
20 000
F5019
Intelligent Power MOSFET
Note * : Under normal operation
Note ** : Under self protection
Note * : Under normal operation
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)
Description
Drain-source voltage
Gate-source voltage
Continuous drain current
Maximum power dissipation
Operating junction temperature
Storage temperature range
Single pulse inductive load switch-off energy dissipation
Description
Drain-source clamp voltage
Gate threshold voltage
Operation gate voltage
Zero gate voltage drain current
Gate-sourse leakage current
Drain-source on-state resistance
Turn-on time
Turn-off time
Over-temperature protection
Short circuit protection
Description
Drain-source clamp voltage
Gate threshold voltage
Operation gate voltage (protection circuit operates)
Zero gate voltage drain current
Gate-sourse leakage current
Drain-source on-state resistance
Turn-on time
Turn-off time
Short circuit protection
Description
Thermal resistance
Absolute maximum ratings (at Tc=25°C, unless otherwise specifi ed)
Electrical characteristics (at Tc=25°C unless otherwise specifi ed)
Electrical characteristics (at Tc=-40~105°C, unless otherwise specifi ed)
Thermal resistance
Features
• Over temperature protection
• Short circuit protection
• Low on-resistance
• High speed switching
Applications
• Solenoid driver
• Lamp driver
• Replacements for fuse and relay
Maximum ratings and characteristics
Symbol
V
V
V
I
I
I
R
t
t
T
I
Symbol
R
R
DSS
GS (n)
GS (un)
on
off
OC
trip
DSS
GS (th)
GS (p)
th (j-c)
th (j-a)
DS (on)
*
**
Symbol
V
V
V
I
I
I
R
t
t
I
DSS
GS (n)
GS (un)
on
off
OC
GS (th)
GS (p)
DSS
DS (on)
Conditions
I
I
–
V
V
I
V
V
V
D
D
D
=1mA, V
=10mA, V
DS
GS
DS
CC
CC
=5A, V
=30V, V
=5V
=13V, R
=13V, V
=13V, V
Symbol
V
V
I
P
T
T
E
http://store.iiic.cc/
D
j
stg
DSS
GSS
D
CL
GS
GS
=5V
GS
GS
GS
T-pack(s)
L
DS
=2.6Ω, V
Conditions
I
I
–
V
V
V
V
I
V
V
=0V
=5V
=5V
D
D
D
=0V
Outline drawings [mm]
=13V
=1mA, V
=10mA, V
DS
DS
GS
GS
DS
GS
=5A, V
=13V, V
=30V, V
=5V*
=5V, Tj>150˚C**
=13V, I
=5V
1
Junction-ambient
Test conditions
Junction-case
GS
GS
D
=5V
GS
=5V
GS
=5A, V
GS
DS
=0V
=0V
=0V
=13V
Characteristics
DC-0.3~7.0
GS
-55 ~ 150
=5V
150
100
40
30
12
min.
min.
min.
150
1.0
3.0
1.0
3.0
8.4
40
38
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
mJ
°C
°C
W
V
V
A
FUJI Intelligent Power MOSFET
Connection
typ.
typ.
typ.
T
Single pulse, dv/dt≤10V/μs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
http://www.fujisemi.com
J
=150°C, L=5mH, I
max.
max.
max.
Remarks
500
800
140
200
200
170
600
940
205
240
220
100
Tc=25°C
Tc=25˚C
2.8
7.0
1.0
3.0
6.7
1.6
4.2
60
62
–
–
–
DC
DC
–
–
D
=8A
°C/W
°C/W
Unit
Unit
Unit
mA
mΩ
mA
mΩ
μA
μA
μA
μA
μA
μs
μs
˚C
μs
μs
V
V
V
A
V
V
V
A
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