AT49BV040-20TC ATMEL Corporation, AT49BV040-20TC Datasheet
AT49BV040-20TC
Manufacturer Part Number
AT49BV040-20TC
Description
Manufacturer
ATMEL Corporation
Specifications of AT49BV040-20TC
Date_code
96+/97+
Packing_info
TSOP
Features
•
•
•
•
•
•
•
•
•
•
•
Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech-
nology, the devices offer access times to 120 ns with power dissipation of just 90 mW
over the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 A.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Chip Erase Cycle Time - 10 seconds
Byte-by-Byte Programming - 30 s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
Typical 10,000 Write Cycles
Small Packaging
– 25 mA Active Current
– 50 A CMOS Standby Current
– 8 x 8 mm CBGA
– 8 x 14 mm V-TSOP
PLCC Top View
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
V - TSOP Top View (8 x 14 mm) or
T - TSOP Top View (8 x 20 mm)
C
D
A
B
E
F
GND
A17
A10
A14
A16
A15
1
CBGA Top View
I/O6
I/O7
A13
A11
A12
NC
2
VCC
I/O4
I/O5
WE
A9
A8
3
VCC
NC
NC
NC
NC
NC
4
I/O2
I/O3
A18
NC
NC
A7
5
I/O0
I/O1
OE
A6
A4
A5
6
GND
CE
A0
A3
A1
A2
7
(continued)
4-Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
AT49BV/LV040
0679AX-A–9/97
™
1
Related parts for AT49BV040-20TC
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
