KDR367E KEC(Korea Electronics), KDR367E Datasheet

KDR367E

Manufacturer Part Number

KDR367E

Description

Manufacturer

KEC(Korea Electronics)

Datasheet

1.KDR367E.pdf (2 pages)

Specifications of KDR367E

Date_code

05+

Packing_info

SOD-523

Current page: 1 of 2
Download datasheet (393Kb)

2003. 2. 25

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

MAXIMUM RATING (Ta=25 )

* : Mounted on a glass epoxy circuit board of 20 20mm,

ELECTRICAL CHARACTERISTICS (Ta=25 )

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10ms)

Power Dissipation

Junction Temperature

Storage Temperature Range

Forward Voltage

Reverse Current

Total Capacitance

Low Forward Voltage : V

Small Package : ESC.

pad dimension of 4 4mm.

CHARACTERISTIC

F(2)

Revision No : 1

=0.23V (Typ.)

SEMICONDUCTOR

TECHNICAL DATA

SYMBOL

FSM

stg

F(1)

F(2)

F(3)

RATING

-55 125

150*

200

100

125

=1mA

=5mA

=100mA

=10V

=0V, f=1MHz

TEST CONDITION

UNIT

SCHOTTKY BARRIER TYPE DIODE

1. ANODE

2. CATHODE

Marking

MIN.

KDR367E

ESC

TYP.

0.18

0.23

0.35

Type Name

DIM

MAX.

0.30

0.50

MILLIMETERS

1.60 0.10

1.20 0.10

0.80 0.10

0.30 0.05

0.60 0.10

0.13 0.05

+ _

UNIT

1/2

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