KRC413E KEC(Korea Electronics), KRC413E Datasheet

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KRC413E

Manufacturer Part Number
KRC413E
Description
Manufacturer
KEC(Korea Electronics)
Datasheet

Specifications of KRC413E

Date_code
03+
Packing_info
SOT-523
2002. 7. 10
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
MARK SPEC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
B
CHARACTERISTIC
CHARACTERISTIC
R1
KRC410E
NK
Revision No : 1
KRC411E
SEMICONDUCTOR
C
E
NM
SYMBOL
KRC410E
KRC411E
KRC412E
KRC413E
KRC414E
V
V
V
CBO
I
CEO
EBO
TECHNICAL DATA
C
KRC412E
RATING
NN
100
50
50
5
SYMBOL
V
I
I
CE(sat)
f
h
CBO
EBO
R
T
FE
1
*
UNIT
KRC413E
mA
V
V
V
NO
V
V
V
I
V
C
CB
EB
CE
CE
=10mA, I
=5V, I
=5V, I
=10V, I
=50V, I
TEST CONDITION
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
KRC414E
C
C
NP
CHARACTERISTIC
=0
=1mA
B
E
C
=0.5mA
=0
=5mA
EPITAXIAL PLANAR NPN TRANSISTOR
KRC410E~KRC414E
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
Marking
2
1
MIN.
120
-
-
-
-
-
-
-
-
-
E
B
SYMBOL
3
T
P
T
ESM
stg
C
j
TYP.
250
100
0.1
4.7
10
22
47
-
-
-
D
J
Type Name
RATING
-55 150
DIM
A
D
G
H
B
C
E
J
MAX.
100
150
100
100
0.3
-
-
-
-
-
-
-
MILLIMETERS
0.27+0.10/-0.05
1.60 0.10
0.85 0.10
0.70 0.10
1.60 0.10
1.00 0.10
0.13 0.05
0.50
+ _
+ _
+ _
+ _
+ _
+ _
UNIT
UNIT
MHz
mW
k
nA
nA
V
1/4

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