KTK5131V KEC(Korea Electronics), KTK5131V Datasheet
KTK5131V
Manufacturer Part Number
KTK5131V
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KTK5131V.pdf
(3 pages)
Specifications of KTK5131V
Date_code
06+
Packing_info
SOT-523
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KTK5131V-RTK/P
Manufacturer:
KEC
Quantity:
30 221
2003. 7. 4
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25 )
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching
Time
2.5 Gate Drive.
Low Threshold Voltage : V
High Speed.
Small Package.
Enhancement-Mode.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
G
CHARACTERISTIC
CHARACTERISTIC
Turn-on Time
Turn-off Time
Revision No : 0
SEMICONDUCTOR
th
=0.5 1.5V.
D
S
SYMBOL
TECHNICAL DATA
V
V
T
T
P
I
GSS
stg
DS
D
D
ch
SYMBOL
V
R
(BR)DSS
I
I
|Y
DS(ON)
C
C
C
V
t
t
GSS
DSS
off
on
oss
iss
rss
th
fs
|
RATING
-55 150
100
150
30
50
20
V
I
V
V
V
I
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
=100 A, V
=10mA, V
= 16V, V
=30V, V
=3V, I
=3V, I
=3V, V
=3V, V
=3V, V
=3V, I
UNIT
mW
mA
TEST CONDITION
V
V
D
D
D
GS
GS
GS
=0.1mA
=10mA
=10mA, V
GS
GS
GS
=0V, f=1MHz
=0V, f=1MHz
=0V, f=1MHz
=0V
=2.5V
DS
=0V
=0V
GS
=0 2.5V
1. SOURCE
2. GATE
3. DRAIN
Type Name
N CHANNEL MOS FIELD
Marking
2
1
EFFECT TRANSISTOR
P
MIN.
0.5
KTK5131V
30
20
-
-
-
-
-
-
-
-
E
B
VSM
P
3
TYP.
140
140
5.5
1.6
6.5
15
-
-
-
-
-
K A
DIM
A
B
C
D
E
G
H
K
P
J
MAX.
1.5
40
1
-
-
-
-
-
-
-
MILLIMETERS
1
0.12 0.05
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.2 0.05
0.40
+ _
+ _
+ _
+ _
+ _
+ _
5
+ _
+ _
UNIT
mS
pF
pF
pF
nS
nS
V
V
A
A
1/3
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