KTK5162S KEC(Korea Electronics), KTK5162S Datasheet

KTK5162S

Manufacturer Part Number

KTK5162S

Description

Manufacturer

KEC(Korea Electronics)

Datasheets

1.KTK5162S.pdf (3 pages)

2.KTK5162S.pdf (3 pages)

Specifications of KTK5162S

Date_code

06+

Packing_info

SOT-23

Current page: 1 of 3
Download datasheet (72Kb)

2001. 10. 29

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

EATURES

MAXIMUM RATINGS (Ta=25 )

EQUIVALENT CIRCUIT

ELECTRICAL CHARACTERISTICS (Ta=25 )

Drain-Source Voltage

Gate-Source Voltage

DC Drain Current

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

Gate Leakage Current

Drain-Source Breakdown Voltage

Drain Cut-off Current

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Time

2.5 Gate Drive.

Low Threshold Voltage : V

High Speed.

Small Package.

Enhancement-Mode.

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

CHARACTERISTIC

Turn-on Time

Turn-off Time

Revision No : 0

SEMICONDUCTOR

=0.5 1.5V.

TECHNICAL DATA

SYMBOL

GSS

stg

SYMBOL

(BR)DSS

DS(ON)

GSS

DSS

off

rss

oss

iss

RATING

-55 150

100

200

150

=100Ì A, V

=10mA, V

= 16V, V

=60V, V

=3V, I

=10V, I

=10V, V

=25V, I

UNIT

TEST CONDITION

=0.1mA

=50mA

=50mA, V

=0V

=2.5V

=0V, f=1MHz

=0V

=0 2.5V

Type Name

Marking

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

1. SOURCE

2. GATE

3. DRAIN

KTK5162S

MIN.

0.5

SOT-23

TYP.

120

105

6.2

1.5

4.4

DIM

MAX.

1.5

MILLIMETERS

1.30+0.20/-0.15

0.13+0.10/-0.05

1.00+0.20/-0.10

0.45+0.15/-0.05

2.40+0.30/-0.20

Lot No.

0.00 ~ 0.10

0.20 MIN

1.30 MAX

2.93 0.20

0.55

1.90

0.95

+ _

UNIT

Ì A

1/3

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