DSSK6002A IXYS Corporation, DSSK6002A Datasheet
DSSK6002A
Manufacturer Part Number
DSSK6002A
Description
TO-247
Manufacturer
IXYS Corporation
Datasheet
1.DSSK6002A.pdf
(2 pages)
Specifications of DSSK6002A
Date_code
09+
Power Schottky Rectifier
with common cathode
V
Symbol
I
I
I
I
E
I
(dv/dt)
T
T
T
P
M
F
V
Weight
*
Symbol
I
V
R
R
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
FRMS
FAV
FAV
FSM
AR
R
200
200
VJ
VJM
stg
C
RSM
AS
tot
ISOL
Version AR only
F
thJC
thCH
d
V
*
cr
V
200
200
RRM
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Conditions
T
T
T
I
V
T
Version A: mounting torque M3
Version AR: mounting force with clip
50/60 Hz, RMS; t = 1 s
typical
Conditions
V
V
I
I
I
AS
F
F
F
C
C
VJ
C
A
R
R
= 30 A;
= 30 A;
= 60 A;
= 155°C; rectangular, d = 0.5
= 155°C; rectangular, d = 0.5; per device
= 4 A; L = 100 µH; T
=1.5 • V
= 25°C
= 45°C; t
= V
= V
Type
DSSK 60-02A
DSSK 60-02AR
RRM
RRM
; T
; T
RRM
p
T
T
T
= 10 ms (50 Hz), sine
VJ
VJ
VJ
VJ
VJ
typ.; f=10 kHz; repetitive
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
VJ
= 25°C; non repetitive
http://store.iiic.cc/
typ.
Characteristic Values
0.25
-55...+175
-55...+150
Maximum Ratings
0.8...1.2
20...120
18000
A
3000
max.
0.70
0.85
0.84
600
175
190
0.8
0.4
0.8
70
30
60
20
6
2
C
V/µs
K/W
K/W
Nm
mA
mA
mJ
V~
°C
°C
°C
W
A
N
A
A
A
A
A
V
V
V
g
I
V
V
TO-247 AD
Version A
A
C = Cathode, A = Anode, TAB = Cathode
Features
• International standard package
• Very low V
• Extremely low switching losses
• Low I
• Epoxy meets UL 94V-0
• Version ..R isolated and
Applications
• Rectifiers in switch mode power
• Free wheeling diode in low voltage
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
C
FAV
A
supplies (SMPS)
converters
protection circuits
UL registered E153432
RRM
F
RM
= 2x30 A
= 200 V
= 0.70 V
-values
C (TAB)
F
DSSK 60-02A
DSSK 60-02AR
A
C
ISOPLUS 247
A
*
Patent pending
Version AR
back surface *
Isolated
1 - 2
TM
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