ISPGDS227J Lattice Semiconductor Corp., ISPGDS227J Datasheet

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ISPGDS227J

Manufacturer Part Number
ISPGDS227J
Description
PLCC28
Manufacturer
Lattice Semiconductor Corp.
Datasheet

Specifications of ISPGDS227J

Date_code
01+
• HIGH-SPEED SWITCH MATRIX
• FLEXIBLE I/O MACROCELL
• IN-SYSTEM PROGRAMMABLE (5-VOLT ONLY)
• E
• APPLICATIONS INCLUDE:
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
The Lattice Semiconductor ispGDS™ family is an ideal solution
for reconfiguring system signal routing or replacing DIP switches
used for feature selection. With today’s demands for customer
ease of use, there is a need for hardware which is easily
reconfigured electronically without dismantling the system. The
ispGDS devices address this challenge by replacing conventional
switches with a software configurable solution. Since each I/O pin
can be set to an independent logic level, the ispGDS devices can
replace most DIP switch functions with about half the pin count,
and without the need for additional pull-up resistors. In addition
to DIP switch replacement, the ispGDS devices are useful as
signal routing cross-matrix switches. This is the only non-volatile
device on the market which can provide this flexibility.
With a maximum tpd of 7.5ns, and a typical active Icc of only 25
mA, these devices provide maximum performance at very low
power levels. The ispGDS devices may be programmed in-sys-
tem, using 5 volt only signals, through a simple 4-wire program-
ming interface. The ispGDS devices are manufactured using
Copyright © 2003 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268--8037; http://www.latticesemi.com
ispgds_03
Features
Description
— 7.5 ns Maximum Propagation Delay
— Typical Icc = 25 mA
— UltraMOS
— Any I/O Pin Can be Input, Output, or Fixed
— Programmable Output Polarity
— Multiple Outputs Can be Driven by One Input
— Programming Time of Less Than One Second
— 4-Wire Programming Interface
— Minimum 10,000 Program/Erase Cycles
— Non-Volatile Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
— Software-Driven Hardware Configuration
— Multiple DIP Switch Replacement
— Software Configuration of Add-In Boards
— Configurable Addressing of I/O Boards
— Multiple Clock Source Selection
— Cross-Matrix Switch
2
CELL TECHNOLOGY
TTL High or Low
®
Advanced CMOS Technology
Lattice Semiconductor’s advanced non-volatile E
which combines CMOS with Electrically Erasable (E
technology. High speed erase times (<100ms) allow the devices
to be reprogrammed quickly and efficiently.
Each I/O macrocell can be configured as an input, an inverting
or non-inverting output, or a fixed TTL high or low output. Any
I/O pin can be driven by any other I/O pin in the opposite bank.
A single input can drive one or more outputs in the opposite bank,
allowing a signal (such as a clock) to be distributed to multiple des-
tinations on the board, under software control. The I/Os accept
and drive TTL voltage levels.
Unique test circuitry and reprogrammable cells allow complete
AC, DC, and functional testing during manufacture. As a result,
Lattice Semiconductor is able to deliver 100% field programma-
bility and functionality of all Lattice Semiconductor products. In
addition, 10,000 erase/write cycles and data retention in excess
of 20 years are specified.
Functional Block Diagram (ispGDS22)
A10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
I/O Cell
Switch
Matrix
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
I/O Cell
ispGDS22/14
Closed only when C0=1 and C1=0
in-system programmable
Vcc
PROGRAMMABLE
Generic Digital Switch
SWITCH MATRIX
C2
0 1
1 0
1 1
0 0
4:1 MUX
C1
November 2003
C0
2
CMOS process
Bank B
2
) floating gate
TM

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