LH28F008SCTV85 Sharp, LH28F008SCTV85 Datasheet

LH28F008SCTV85

Manufacturer Part Number

LH28F008SCTV85

Description

TSOP40

Manufacturer

Sharp

Datasheet

1.LH28F008SCTV85.pdf (40 pages)

Specifications of LH28F008SCTV85

Date_code

09+

Current page: 1 of 40
Download datasheet (301Kb)

DESCRIPTION

The LH28F008SC-V/SCH-V flash memories with

Smart 5 technology are high-density, low-cost,

nonvolatile, read/write storage solution for a wide

range of applications. Their symmetrically-blocked

architecture, flexible voltage and enhanced cycling

capability provide for highly flexible component

suitable for resident flash arrays, SIMMs and memory

cards. Their enhanced suspend capabilities provide

for an ideal solution for code + data storage

applications. For secure code storage applications,

such as networking, where code is either directly

executed out of flash or downloaded to DRAM, the

LH28F008SC-V/SCH-V

protection : absolute protection with V

selective hardware block locking, or flexible software

block locking. These alternatives give designers

ultimate control of their code security needs.

FEATURES

• Smart 5 technology

• High performance read access time

COMPARISON TABLE

LH28F008SC-V/SCH-V

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

LH28F008SC-V

LH28F008SCH-V

LH28F008SC-V85/SCH-V85

LH28F008SC-V12/SCH-V12

– 5 V V

– 5 V or 12 V V

– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)

– 120 ns (5.0±0.5 V)

VERSIONS

offer

OPERATING TEMPERATURE

three

–25 to +85

0 to +70

levels

at GND,

- 1 -

• Enhanced automated suspend options

• Enhanced data protection features

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture

• Enhanced cycling capability

• Low power management

• Automated byte write and block erase

• ETOX

• Packages

ETOX is a trademark of Intel Corporation.

– Byte write suspend to read

– Block erase suspend to byte write

– Block erase suspend to read

– Absolute protection with V

– Flexible block locking

– Block erase/byte write lockout during power

– Sixteen 64 k-byte erasable blocks

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

– Deep power-down mode

– Automatic power saving mode decreases I

– Command user interface

– Status register

– 40-pin TSOP Type I (TSOP040-P-1020)

– 44-pin SOP (SOP044-P-0600)

– 48-ball CSP (FBGA048-P-0608)

transitions

in static mode

V nonvolatile flash technology

8 M-bit (1 MB x 8) Smart 5

deep power-down current (MAX.)

DC CHARACTERISTICS

Normal bend/Reverse bend

LH28F008SC-V/SCH-V

10 µA

20 µA

Flash Memories

= GND

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