R1LV1616RSA7SI Renesas Electronics Corporation., R1LV1616RSA7SI Datasheet

Manufacturer Part Number

R1LV1616RSA7SI

Description

TSOP48

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.R1LV1616RBG-5SI.pdf (18 pages)

Date_code

07+

REJ03C0101-0400Z Rev.4.00 2007.09.12

page 1 of 15

R1LV1616R Series

16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)

fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

battery backup are the important design objectives.

10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-

pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8

array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed

circuit boards.

The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,

The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and

The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x

• Single 2.7-3.6V power supply

• Small stand-by current:2µA (3.0V, typ.)

• Data retention supply voltage =2.0V

• No clocks, No refresh

• All inputs and outputs are TTL compatible

• Easy memory expansion by CS1#, CS2, LB# and UB#

• Common Data I/O

• Three-state outputs: OR-tie capability

• OE# prevents data contention on the I/O bus

• Process technology: 0.15um CMOS

Description

Features

REJ03C0101-0400Z

2007.09.12

Rev.4.00