MC100EP01DG ON Semiconductor, MC100EP01DG Datasheet - Page 6

• Manufacturer Part Number: MC100EP01DG
• Description: IC GATE OR/NOR ECL 4INPUT 8SOIC
• Manufacturer: ON Semiconductor
• Series: 100EPr

Specifications of MC100EP01DG

• Logic Type: NOR/OR Gate
• Number Of Circuits: 1
• Number Of Inputs: 4
• Schmitt Trigger Input: No
• Output Type: Differential
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Product: MUX Gates
• Logic Family: ECL
• High Level Output Current: - 50 mA
• Low Level Output Current: 50 mA
• Propagation Delay Time: 0.33 ns
• Supply Voltage (max): +/- 5.5 V
• Supply Voltage (min): +/- 3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output High, Low: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC100EP01DGOS

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
15. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 11. AC CHARACTERISTICS
f
t
t
t
t
t
Symbol
max
PLH
PHL
JITTER
r
f
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Maximum Frequency
(See Figure 2. F
Propagation Delay
Cycle−to−Cycle Jitter
(See Figure 2. F
Output Rise/Fall Times
(20% − 80%)
Characteristic
(See Application Note AND8020/D − Termination of ECL Logic Devices.)
Figure 3. Typical Termination for Output Driver and Device Evaluation
Driver
Device
900
800
700
600
500
400
300
200
100
max
max
É É É É É É É É É É
É É É É É É É É É É
0
/JITTER)
/JITTER)
0
V
Q
Q
CC
D to Q, Q
1000
= 3.0 V to 5.5 V; V
Q, Q
2000
Min
150
50
Figure 2. F
Z
Z
http://onsemi.com
FREQUENCY (MHz)
o
o
= 50 W
= 50 W
−40°C
EE
Typ
260
120
> 3
0.2
3000
= 0 V or V
50 W
V
6
TT
max
(JITTER)
= V
Max
330
170
< 1
/Jitter
V
CC
TT
CC
4000
− 2.0 V
= 0 V; V
50 W
Min
150
60
EE
25°C
Typ
270
130
5000
> 3
0.2
= −3.0 V to −5.5 V (Note 15)
CC
D
D
− 2.0 V.
Max
330
180
< 1
6000
Receiver
Device
8
7
6
5
4
3
2
1
Min
200
70
É É
É É
É É
85°C
Typ
300
150
> 3
0.2
Max
350
200
< 1
Unit
GHz
ps
ps
ps