DS1225Y-150 Dallas Semiconductor, DS1225Y-150 Datasheet

DS1225Y-150

Manufacturer Part Number

DS1225Y-150

Description

Manufacturer

Dallas Semiconductor

Datasheet

1.DS1225Y-150.pdf (8 pages)

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FEATURES

DESCRIPTION

The DS1225Y 64K Nonvolatile SRAM is a 65,536–bit,

fully static, nonvolatile RAM organized as 8192 words

by 8 bits. Each NV SRAM has a self–contained lithium

energy source and control circuitry which constantly

monitors V

such a condition occurs, the lithium energy source is

automatically switched on and write protection is uncon-

ditionally enabled to prevent data corruption. The NV

SRAM can be used in place of existing 8K x 8 SRAMs

10 years minimum data retention in the absence of

external power

Data is automatically protected during power loss

Directly replaces 8K x 8 volatile static RAM or EE-

PROM

Unlimited write cycles

Low-power CMOS

JEDEC standard 28–pin DIP package

Read and write access times as fast as 150 ns

Full 10% operating range

Optional industrial temperature range of –40 C to

+85 C, designated IND

for an out–of–tolerance condition. When

PIN ASSIGNMENT

PIN DESCRIPTION

A0–A12

DQ0–DQ7

GND

directly conforming to the popular bytewide 28–pin DIP

standard. The DS1225Y also matches the pinout of the

2764 EPROM or the 2864 EEPROM, allowing direct

substitution while enhancing performance. There is no

limit on the number of write cycles that can be executed

and no additional support circuitry is required for micro-

processor interfacing.

GND

DQ0

DQ1

DQ2

A12

28–PIN ENCAPSULATED PACKAGE

64K Nonvolatile SRAM

– Address Inputs

– Data In/Data Out

– Chip Enable

– Write Enable

– Output Enable

– Power (+5V)

– Ground

– No Connect

720 MIL EXTENDED

DS1225Y

VCC

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

021998 1/8

DS1225Y

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