ATP114-TL-H ON Semiconductor, ATP114-TL-H Datasheet

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ATP114-TL-H

Manufacturer Part Number

ATP114-TL-H

Description

Manufacturer

ON Semiconductor

Datasheet

1.ATP114-TL-H.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

ATP114-TL-H

Manufacturer:

ON

Quantity:

12 000

Current page: 1 of 4
Download datasheet (349Kb)

Ordering number : ENA1711

ATP114

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm (typ)

7057-001

Note : *1 V DD =--15V, L=200 μ H, I AV =- -28A

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

•

•

ON-resistance R DS (on)1=12m Ω (typ.)

4V drive

*2 L ≤ 100 μ H, Single pulse

1

0.8

2.3

Parameter

6.5

4

2

2.3

3

0.6

0.55

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

0.4

V DSS

V GSS

I D

I DP

P D

Tch

Tstg

E AS

I AV

1.5

Symbol

0.4

http://semicon.sanyo.com/en/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

Tc=25°C

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

ATP114

4.6

2.6

•

•

0.4

Input Capacitance Ciss=4000pF(typ.)

Halogen free compliance

Conditions

Product & Package Information

• Package

• JEITA, JEDEC

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Electrical Connection

1

70710PA TK IM TC-00002342

DATA SHEET

TL

2,4

3

Ratings

--55 to +150

: ATPAK

: -

--165

- -60

±20

--55

--28

150

100

Marking

60

No. A1711-1/4

ATP114

LOT No.

Unit

mJ

°C

°C

W

A

A

A

V

V

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