CXK5B18120TM-12 Sony, CXK5B18120TM-12 Datasheet

CXK5B18120TM-12

Manufacturer Part Number

CXK5B18120TM-12

Description

Manufacturer

Sony

Datasheet

1.CXK5B18120TM-12.pdf (10 pages)

Specifications of CXK5B18120TM-12

Case

TSOP

Date_code

96+

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Block Diagram

Description

CMOS static RAM organized as 65536 words by

18 bits. Operating on a single 3.3V supply this

asynchronous IC is suitable for use in high speed

and low power applications.

Features

• Single 3.3V Supply

• Fast access time

• Low stand-by current:

• Low power operation 1116mW (Max.)

• Package line-up

CXK5B18120TM is a high speed 1M bit Bi-

Dual Vcc/Vss

CXK5B18120TM

A14

A15

A12

A13

A11

A10

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

65536-word

Buffer

400mil 44pin TSOP Package

3.3V±0.3V

18-bit High Speed Bi-CMOS Static RAM

Decoder

10mA (Max.)

Row

12ns (Max.)

256

I/O1 I/O18

I/O Gate

Decoder

Memory

Column

Matrix

Buffer

I/O

4608

CXK5B18120TM

GND

Vcc

GND

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

I/O9

A15

A14

A13

A12

Vcc

Pin configuration

– 1 –

(Top View)

Function

Structure

65536-word

Silicon gate Bi-CMOS IC

I/O18

A10

A11

I/O17

I/O16

I/O15

GND

Vcc

I/O14

I/O13

I/O12

I/O11

I/O10

44 pin TSOP (Plastic)

18-bit static RAM

Pin Description

A0 to A15

I/O1

I/O10

Vcc

GND

Symbol

to I/O18

to I/O9

Address input

Data input output

(lower byte I/O)

Data input output

(upper byte I/O)

Chip enable input

Write enable input

Output enable input

Lower byte select input

Upper byte select input

+3.3V Power supply

Ground

No connection

Description

E93585A57-PK

-12

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