IRF7101TR International Rectifier Corp., IRF7101TR Datasheet

IRF7101TR

Manufacturer Part Number

IRF7101TR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7101TR.pdf (9 pages)

Specifications of IRF7101TR

Case

SSOP

Date_code

2001

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Thermal Resistance Ratings

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications.

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Description

Absolute Maximum Ratings

dv/dt

@ T

Adavanced Process Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

STG

= 25°C

= 100°C

= 25°C

With these improvements, multiple

Maximum Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Sodering Temperature, for 10 seconds

Parameter

@ 10V

G 2

G 1

S 2

S 1

Top View

Min.

–––

300(1.6mm from case)

HEXFET

-55 to + 150

Max.

0.016

D 1

D 2

± 12

3.5

2.3

2.0

3.0

Typ.

S O -8

–––

IRF7101

Power MOSFET

DS(on)

DSS

PD - 9.871B

= 3.5A

Max

62.5

= 20V

= 0.10

°C/W

Units

W/°C

V/nS

°C

8/25/97

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