SI4410DY-TR International Rectifier Corp., SI4410DY-TR Datasheet
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SI4410DY-TR
Manufacturer Part Number
SI4410DY-TR
Description
Manufacturer
International Rectifier Corp.
Datasheet
1.SI4410DY-TR.pdf
(8 pages)
Specifications of SI4410DY-TR
Case
SOP/8
Date_code
01+
Description
Absolute Maximum Ratings
Thermal Resistance
This N-channel HEXFET
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
www.irf.com
V
I
I
I
P
P
dv/dt
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
JA
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
Power MOSFET is produced
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
1
2
3
4
T o p V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
±8.0
0.02
±10
±50
400
± 20
50
D
D
D
D
2.5
1.6
5.0
A
30
A
SO-8
Si4410DY
R
®
DS(on)
Power MOSFET
V
DSS
PD - 91853C
= 0.0135
= 30V
Units
Units
W/°C
°C/W
V/ns
W
mJ
°C
V
A
V
1
11/22/99