SI4410DY-TR International Rectifier Corp., SI4410DY-TR Datasheet

SI4410DY-TR

Manufacturer Part Number

SI4410DY-TR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.SI4410DY-TR.pdf (8 pages)

Specifications of SI4410DY-TR

Case

SOP/8

Date_code

01+

Current page: 1 of 8
Download datasheet (94Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

This N-channel HEXFET

using International Rectifier's advanced HEXFET power

MOSFET technology. The low on-resistance and low gate

charge inherent to this technology make this device ideal

for low voltage or battery driven power conversion

applications

The SO-8 package with copper leadframe offers enhanced

thermal characteristics that allow power dissipation of

greater that 800mW in typical board mount applications.

www.irf.com

dv/dt

@ T

N-Channel MOSFET

Low On-Resistance

Low Gate Charge

Surface Mount

Logic Level Drive

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Peak Diode Recovery dv/dt

Single Pulse Avalanche Energy

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power MOSFET is produced

Parameter

@ 10V

T o p V ie w

HEXFET

-55 to + 150

Max.

±8.0

0.02

±10

±50

400

± 20

2.5

1.6

5.0

SO-8

Si4410DY

DS(on)

Power MOSFET

DSS

PD - 91853C

= 0.0135

= 30V

Units

W/°C

°C/W

V/ns

°C

11/22/99

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