KMB6D0DN30QA KEC(Korea Electronics), KMB6D0DN30QA Datasheet

KMB6D0DN30QA

Manufacturer Part Number

KMB6D0DN30QA

Description

Manufacturer

KEC(Korea Electronics)

Datasheet

1.KMB6D0DN30QA.pdf (5 pages)

Specifications of KMB6D0DN30QA

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

KMB6D0DN30QA

Manufacturer:

KEC

Quantity:

20 000

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2007. 4. 3

GENERAL DESCRIPTION

This planer stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and SMPS.

FEATURES

MAXIMUM RATING (Ta=25

* : Surface Mounted on FR4 Board, t 10sec.

Drain Source Voltage

Gate Source Voltage

Drain Current

Drain Source Diode Forward Current

Drain Power Dissipation

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Ambient

Drain-Source ON Resistance.

Super High Dense Cell Design

High Power and Current Handing Capability

DSS

DS(ON)

=30V, I

=28m

=42m

CHARACTERISTIC

PIN CONNECTION (TOP VIEW)

=6A.

S 1

G 1

S 2

G 2

(Max.) @V

Revision No : 0

SEMICONDUCTOR

=10V

=4.5V

Pulsed

100

Unless otherwise noted)

TECHNICAL DATA

(note1)

D 1

D 2

SYMBOL

thJA

DSS

GSS

stg

PATING

-50~150

1.3

1.6

UNIT

KMB6D0DN30QA

Dual N-Ch Trench MOSFET

FLP-8

DIM

MILLIMETERS

0.15+0.1/-0.05

0.20+0.1/-0.05

4.85 0.2

3.94 0.2

6.02 0.3

1.63 0.2

0.65 0.2

0.4 0.1

1.27

+ _

1/5

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