MB81F641642D-102FN Fujitsu, MB81F641642D-102FN Datasheet

MB81F641642D-102FN

Manufacturer Part Number

MB81F641642D-102FN

Description

SDRAM 4Mx16, 100 MHz, TSOP 54 Pin

Manufacturer

Fujitsu

Datasheet

1.MB81F641642D-102FN.pdf (48 pages)

Specifications of MB81F641642D-102FN

Package

Tray/JP

Unit

1080

Date_code

00+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MB81F641642D-102FN-B-GJ

Manufacturer:

FUJITSU/富士通

Quantity:

20 000

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FUJITSU SEMICONDUCTOR

MEMORY

CMOS

SYNCHRONOUS DYNAMIC RAM

MB81F641642D-75/-102/-102L

CL - t

Clock Frequency

Burst Mode Cycle Time

Access Time From

Clock

Operating Current

Power Down Mode Current (I

Self Refresh Current (I

DESCRIPTION

PRODUCT LINE & FEATURES

The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing

67,108,864 memory cells accessible in a 16-bit format. The MB81F641642D features a fully synchronous

operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence. The MB81F641642D SDRAM is designed to

reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing

constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.

The MB81F641642D is ideally suited for workstations, personal computers, laser printers, high resolution graphic

adapters/accelerators and other applications where an extremely large memory and bandwidth are required and

where a simple interface is needed.

DATA SHEET

RCD

• Single +3.3 V Supply ±0.3 V tolerance

• LVTTL compatible I/O interface

• 4 K refresh cycles every 64 ms

• Four bank operation

• Burst read/write operation and burst

- t

1 M

Parameter

read/single write operation capability

CC6

)

CL = 2

CL = 3

CL = 2

CL = 3

Synchronous Dynamic Random Access Memory

CC2P

16 BIT

)

CMOS 4-Bank

3 - 3 - 3 clk min.

133 MHz max.

90 mA max.

7.5 ns min.

1 mA max.

10 ns min.

6 ns max.

-75

1,048,576-Word

• Programmable burst type, burst length, and

• Auto-and Self-refresh (every 15.6 s)

• CKE power down mode

• Output Enable and Input Data Mask

1 mA max./ 500 µA max.

CAS latency

2 - 2 - 2 clk min.

MB81F641642D

100 MHz max.

85 mA max.

1 mA max.

10 ns min.

-102/-102L

6 ns max.

16 Bit

2 - 2 - 2 clk min.

Reference Value

@66MHz(CL=2)

66 MHz max.

70 mA max.

1 mA max.

10 ns min.

15ns min.

8 ns max.

6 ns max.

AE4.1E

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