GS8160Z18BGT-200I GSI Technology, GS8160Z18BGT-200I Datasheet
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GS8160Z18BGT-200I
Manufacturer Part Number
GS8160Z18BGT-200I
Description
Manufacturer
GSI Technology
Datasheet
1.GS8160Z18BGT-150I.pdf
(23 pages)
Specifications of GS8160Z18BGT-200I
Pack_quantity
72
Comm_code
85423245
Lead_time
56
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
Functional Description
The GS8160Z18/36BT is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
Flow Through
Pipeline
3-1-1-1
2-1-1-1
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
Curr
Curr
Curr
Curr
tCycle
tCycle
Parameter Synopsis
t
t
KQ
KQ
(x18)
(x36)
(x18)
(x36)
1/23
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160Z18/36BT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8160Z18/36BT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
-250
295
345
225
255
2.5
4.0
5.5
5.5
-200
245
285
200
220
3.0
5.0
6.5
6.5
-150
200
225
185
205
3.8
6.7
7.5
7.5
GS8160Z18/36BT-250/200/150
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2004, GSI Technology
250 MHz–150 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD