MT46V16M16CV-5B:K Micron Semiconductor Products, MT46V16M16CV-5B:K Datasheet

MT46V16M16CV-5B:K

Manufacturer Part Number

MT46V16M16CV-5B:K

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46V16M16CV-5BK.pdf (93 pages)

Specifications of MT46V16M16CV-5B:K

Pack_quantity

228

Comm_code

85423231

Lead_time

Eccn

EAR99

Current page: 1 of 93
Download datasheet (4Mb)

Double Data Rate (DDR) SDRAM

MT46V64M4 – 16 Meg x 4 x 4 banks

MT46V32M8 – 8 Meg x 8 x 4 banks

MT46V16M16 – 4 Meg x 16 x 4 banks

Features

• V

• Bidirectional data strobe (DQS) transmitted/

• Internal, pipelined double-data-rate (DDR)

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data

• Programmable burst lengths (BL): 2, 4, or 8

• Auto refresh

• Self refresh (not available on AT devices)

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2-compatible)

• Concurrent auto precharge option supported

•

PDF: 09005aef80768abb/Source: 09005aef82a95a3a

256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN

received with data, that is, source-synchronous data

capture (x16 has two – one per byte)

architecture; two data accesses per clock cycle

aligned with data for WRITEs

(x16 has two – one per byte)

– 64ms, 8192-cycle(Commercial & Industrial)

– 16ms, 8192-cycle (Automotive)

RAS lockout supported (

= +2.5V ±0.2V, V

= +2.6V ±0.1V, V

Products and specifications discussed herein are subject to change by Micron without notice.

Q = +2.5V ±0.2V

Q = +2.6V ±0.1V (DDR400)

RAP =

RCD)

Notes: 1. Only available on Revision F and G.

Options

• Configuration

• Plastic package – OCPL

• Plastic package

• Timing – cycle time

• Self refresh

• Temperature rating

• Revision

– 64 Meg x 4 (16 Meg x 4 x 4 banks)

– 32 Meg x 8 (8 Meg x 8 x 4 banks)

– 16 Meg x 16 (4 Meg x 16 x 4 banks)

– 66-pin TSOP

– 66-pin TSOP (Pb-free)

– 60-ball FBGA (8mm x 14mm)

– 60-ball FBGA (8mm x 14mm) (Pb-free)

– 60-ball FBGA (8mm x 12.5mm)

– 5ns @ CL = 3 (DDR400B)

– 6ns @ CL = 2.5 (DDR333) FBGA only

– 6ns @ CL = 2.5 (DDR333) TSOP only

– 7.5ns @ CL = 2 (DDR266)

– 7.5ns @ CL = 2 (DDR266A)

– 7.5ns @ CL = 2.5 (DDR266B)

– Standard

– Low-power self refresh

– Commercial (0°C to +70°C)

– Industrial (–40°C to +85°C)

– Automotive (–40°C to +105°C)

– x4, x8

– x16

– x4, x8, x16

(Pb-free)

Micron Technology, Inc., reserves the right to change products or specifications without notice.

2. Only available on Revision K.

3. Not recommended for new designs.

4. Contact Micron for availability.

256Mb: x4, x8, x16 DDR SDRAM

Marking

Features

16M16

64M4

32M8

-75E

-75Z

None

-75

-5B

-6T

-6

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