2SB1132-P-AB3-R UTC [Unisonic Technologies], 2SB1132-P-AB3-R Datasheet
2SB1132-P-AB3-R
Related parts for 2SB1132-P-AB3-R
2SB1132-P-AB3-R Summary of contents
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... UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low V . CE(SAT -0.2V(Typ -500mA/-50mA) CE(SAT ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R ...
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... ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current ( Single pulse, Pw=100ms ) Collector Power Dissipation Junction Temperature Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ...
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... TYPICAL CHARACTERISTICS Grounded Emitter Propagation Characteristics -500 -200 Ta=100℃ -100 Ta=25℃ -50 Ta= -55℃ -20 - -0.2 -0.4 -0.6 -0.8 -1.0 0 Base to Emitter Voltage Current Gain vs. Collector Current (Ⅰ) 1000 500 200 100 -10 -20 -50-100-200-500-1000 Collector Current, Ic(mA) Collector-emitter Saturation Voltage vs. ...
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... TYPICAL CHARACTERISTICS(Cont.) Gain Bandwidth Product vs. Emitter Current 200 100 -10 Emitter Current , I Safe Operation Area - -0.5 -0.2 -0.1 -0.05 Ta=25°C -0.02 *Single pulse -0.01 0 -0.2 -0 Collector to Emitter Voltage, V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...