AMMC-5026_08 AVAGO [AVAGO TECHNOLOGIES LIMITED], AMMC-5026_08 Datasheet

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AMMC-5026_08

Manufacturer Part Number
AMMC-5026_08
Description
2-35 GHz GaAs MMIC Traveling Wave Amplifier
Manufacturer
AVAGO [AVAGO TECHNOLOGIES LIMITED]
Datasheet
AMMC-5026
2–35 GHz GaAs MMIC Traveling Wave Amplifier
Data Sheet
Description
The AMMC-5026 is a broadband PHEMT GaAs MMIC
Traveling Wave Amplifier (TWA) designed for medium
output power and high gain over the full 2 GHz to 35 GHz
frequency range. The design employs a 6-section cascode
connected FET structure to provide flat gain and medium
power as well as uniform group delay. For improved reli-
ability and moisture protection, the die is passivated at
the active areas.
Applications
• Broadband gain block
• Broadband driver amplifier
• 10 Gb/s Fiber Optics
Absolute Maximum Ratings
Symbol
V
I
V
I
V
I
P
T
T
T
T
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
dd
g1
g2
ch
stg
max
dd
in
b
g1
g2
device.
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
CW Input Power
Channel Temperature
Operating Backside Temperature
Storage Temperature
Max. Assembly Temp (60 sec max)
[1]
Units
V
mA
V
mA
V
mA
dBm
°C
°C
°C
°C
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
Min.
-5
-9
-3
-10
-55
-65
Features
• Frequency range: 2 – 35 GHz
• Gain: 10.5 dB
• Gain flatness: ±0.8 dB
• Return loss:
• Output power (P-1dB):
• Noise figure (6–19 GHz): ≤ 4 dB
Input 17 dB, Output: 15 dB
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
3050 x 840 µm (119 x 33 mils)
±10 µm (±0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (2.9 ± 0.4 mils)
Max.
10
450
+5
+3.5
23
+150
+165
+300

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AMMC-5026_08 Summary of contents

Page 1

... GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Description The AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier (TWA) designed for medium output power and high gain over the full 2 GHz to 35 GHz frequency range. The design employs a 6-section cascode connected FET structure to provide flat gain and medium power as well as uniform group delay ...

Page 2

... AMMC-5026 DC Specifications/Physical Properties Symbol Parameters and Test Conditions I Saturated Drain Current dss ( =open circuit First Gate Pinch-off Voltage =0 =open circuit dss g2 V Second Gate Self-bias Voltage =150 mA, V =open circuit) ...

Page 3

... AMMC-5026 Typical Performance (T = 25° 150 mA, V chuck -10 - FREQUENCY (GHz) Figure 1. Gain. 160 120 FREQUENCY (GHz) Figure 4. Group Delay Open 50Ω S11(dB) ...

Page 4

... AMMC-5026 Typical Performance (T = 25° 150 mA, V chuck -10 - FREQUENCY (GHz) Figure 7. Gain. 100 FREQUENCY (GHz) Figure 10. Group Delay S21(dB) 25°C S21(dB) -40°C S21(dB) 80° ...

Page 5

... AMMC-5026 Typical Scattering Parameters (T = 25° 150 mA) chuck dd dd Freq GHz dB Mag Ang 2.0 -24.93 0.06 -56 3.0 -26.84 0.05 -18 4.0 -25.16 0.06 -2 5.0 -23.72 0.07 2 6.0 -22.99 0.07 2 7.0 -22.58 0.07 1 8.0 -21.97 0.08 1 9.0 -21.29 0.09 -3 10.0 -20.67 0.09 -7 11.0 -20.29 0.10 -16 12.0 -20.47 0.09 -29 13.0 -21.49 0.08 -43 14.0 -23.65 0.07 -59 15.0 -28.02 0.04 -81 16.0 -39.49 0.01 -131 17.0 -31.18 0.03 86 18.0 -24.21 0.06 60 19.0 -20.93 0.09 38 20.0 -18.20 0.12 13 21.0 -17.48 0.13 -17 22.0 -17.43 0.13 -46 23.0 -17.77 0.13 -81 24.0 -18.27 0.12 -119 25.0 -18.66 0.12 -161 26.0 -18.56 0.12 156 27.0 -18.60 0.12 112 28.0 -19.07 0.11 66 29.0 -19.79 0.10 9 30.0 -18.63 0.12 -59 31.0 -15.62 0.17 -116 32.0 -13.40 0.21 -161 33.0 -12.69 0.23 161 34.0 -14.73 0.18 127 35.0 -26.00 0.05 120 36.0 -14.82 0.18 -157 37.0 -10.01 0.32 172 38.0 -9.81 0.32 161 39.0 -6.40 0.48 157 40 ...

Page 6

... AMMC-5026 Typical Scattering Parameters (T = 25° 150 mA) chuck dd dd Freq GHz dB Mag Ang 2.0 -24.88 0.06 -57 3.0 -26.86 0.05 -19 4.0 -25.30 0.05 -2 5.0 -23.94 0.06 2 6.0 -23.17 0.07 2 7.0 -22.72 0.07 1 8.0 -22.09 0.08 1 9.0 -21.42 0.08 -3 10.0 -20.79 0.09 -7 11.0 -20.42 0.10 -17 12.0 -20.68 0.09 -30 13.0 -21.76 0.08 -44 14.0 -24.04 0.06 -61 15.0 -28.68 0.04 -83 16.0 -40.72 0.01 -151 17.0 -30.52 0.03 86 18.0 -24.07 0.06 58 19.0 -21.00 0.09 36 20.0 -18.37 0.12 12 21.0 -17.78 0.13 -18 22.0 -17.89 0.13 -49 23.0 -18.34 0.12 -84 24.0 -18.89 0.11 -123 25.0 -19.20 0.11 -166 26.0 -19.05 0.11 151 27.0 -19.12 0.11 108 28.0 -19.87 0.10 62 29.0 -20.78 0.09 3 30.0 -19.42 0.11 -67 31.0 -16.18 0.16 -123 32.0 -13.92 0.20 -166 33.0 -13.31 0.22 158 34.0 -15.52 0.17 129 35.0 -23.72 0.07 144 36.0 -14.68 0.18 -169 37.0 -10.47 0.30 166 38.0 -9.72 0.33 159 39.0 -6.77 0.46 152 40 ...

Page 7

... Biasing and Operation AMMC-5026 is biased with a single positive drain supply (V ) and a negative gate supply ( bias conditions for the AMMC-5026 is V 150 mA for best overall performance. Open circuit is the default setting for the V biasing. g2 Figure 17 shows a typical bonding configuration for the GHz operations. In this case, auxiliary drain and V capacitors (> ...

Page 8

... Vd) 505 840 (±10 µm) 252 89 (RF Input Pad) Figure 16. AMMC-5026 Bonding Pad Locations. (dimensions in micrometers) 1.5 mil dia.Gold Wire Bond Feedthru 4 nH Inductor (1.0 mil Gold Wire Bond with length of 200 mils AMMC-5026 IN 2.0 mil nom. gap 0.7 mil dia. Gold Bond Wire (Length Not important) Figure 17 ...

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