BTA216-800E Philips Semiconductors, BTA216-800E Datasheet - Page 2

• Manufacturer Part Number: BTA216-800E
• Description: Three quadrant triacs guaranteed commutation
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
October 1999
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dI
dI
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
com
com
D
/dt
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
Gate controlled turn-on
time
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
I
I
T
T(RMS)
T(RMS)
TM
G
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
j
j
j
D
D
D
D
D
D
DM
DM
DM
= 20 A
= 125 ˚C
= 125 ˚C
= 110 ˚C; exponential
= 0.1 A; dI
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 20 A; V
= 67% V
= 400 V; T
= 400 V; T
/dt = 20v/ s; gate
/dt = 0.1v/ s; gate
= 16 A;
= 16 A;
DRM(max)
T
GT
GT
T
D
G
T
DRM(max)
= 0.1 A
= 0.1 A
;
/dt = 5 A/ s
= 0.1 A
= 0.1 A
= V
= 0.1 A;
BTA216-
BTA216-
j
j
= 110 ˚C;
= 110 ˚C;
2
DRM(max)
;
;
MIN.
0.25
...D
1.8
4.3
30
-
-
-
-
-
-
-
-
-
-
-
TYP.
MIN.
...E
1.2
0.7
0.4
0.1
3.5
5.3
60
BTA216 series D, E and F
-
-
-
-
-
-
-
-
MIN.
...D
...F
4.5
6.3
15
25
25
15
70
5
5
5
-
-
-
-
MAX.
TYP.
TYP.
Objective specification
...E
1.5
1.5
0.5
60
10
10
10
20
30
30
25
2
-
-
-
-
-
-
MAX.
MAX.
...F
1.2
1.7
25
25
25
25
40
40
30
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
A/ms
A/ms
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s