HMMC-5617 HP [Agilent(Hewlett-Packard)], HMMC-5617 Datasheet - Page 5

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HMMC-5617

Manufacturer Part Number
HMMC-5617
Description
6-18 GHz Medium Power Amplifier
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
* 0.2 nH bond wire inductance (10 mils)
Figure 10. Assembly for single drain-bias operation
Figure 12. Bonding pad positions
This data sheet contains a variety of
typical and guaranteed performance
data. The information supplied should
not be interpreted as a complete list
of circuit specifications. Customers
920
530
IN
0
Short bond wires
0
0
RF input
79
145
800 pF
V
G1
*
V
D1
355
To V
573
DD
593
Chip capacitor (100 pF)
Locate near MMIC
power supply
Gold plated shim (optional)
V
D2
V
G2
considering the use of this, or other
Agilent TCA GaAs ICs, for their design
should obtain the current production
specifications from Agilent TCA
Marketing. In this data sheet the term
*
RF out
920
OUT
Note: All dimensions
in micrometers.
* 0.2 nH bond wire inductance (10 mils)
Figure 11. Assembly with gate bias connections
Bonding island or
small chip-capacitor
To V
G1
RF input
power supply
800 pF
*
typical refers to the 50th percentile
performance. For additional information
contact Agilent TSO Marketing at
mmic_helpline@agilent.com.
To V
DD
Chip capacitor (100 pF)
Locate near MMIC
To V
power supply
Gold plated shim (optional)
Bonding island or
small chip-capacitor
G2
power supply
*
RF out
5

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