HUFA76413DK8T_10 FAIRCHILD [Fairchild Semiconductor], HUFA76413DK8T_10 Datasheet

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HUFA76413DK8T_10

Manufacturer Part Number
HUFA76413DK8T_10
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.HUFA76413DK8T_10.pdf (11 pages)
©2010 Fairchild Semiconductor Corporation
HUFA76413DK8T_F085 Rev. C1
HUFA76413DK8T_F085
N-Channel Logic Level UltraFET
60V, 4.8A, 56m
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
R
D
J
DSS
GS
AS
D
Symbol
, T
JA
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
STG
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
®
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
C
C
C
process. This advanced pro-
= 25
= 25
= 125
o
C
o
o
C, V
C, V
o
C, V
GS
GS
SO-8
GS
= 10V)
= 5V)
Parameter
= 5V, R
T
A
= 25°C unless otherwise noted
®
JA
Power MOSFET
= 228
certification.
o
1
C/W)
Applications
• Motor and Load Control
• Powertrain Management
Features
• 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance r
• Ultra-Low On-Resistance r
• Qualified to AEC Q101
• RoHS Compliant
D1 (8)
S1 (1)
D1 (7)
G1 (2)
D2 (6)
D2 (5)
S2 (3)
DS(ON)
DS(ON)
-55 to 150
Ratings
Figure 4
0.02
260
5.1
4.8
2.5
191
228
60
50
16
1
= 0.049
= 0.056
G2 (4)
October 2010
www.fairchildsemi.com
V
V
GS
GS
Units
W/
o
o
o
mJ
C/W
C/W
C/W
o
W
V
A
V
A
A
A
C
10V
5V
o
C

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HUFA76413DK8T_10 Summary of contents

Page 1

HUFA76413DK8T_F085 N-Channel Logic Level UltraFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- ® ing the innovative UltraFET process. This advanced pro- cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding ...

Page 2

Package Marking and Ordering Information Device Marking Device 76413DK8 HUFA76413DK8T_F085 Electrical Characteristics Symbol Parameter Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V ...

Page 3

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0 AMBIENT TEMPERATURE ( A Figure 1. Normalized Power Dissipation vs Ambient Temperature 4 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 0.01 ...

Page 4

Typical Characteristics 200 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) 1 SINGLE PULSE T = MAX RATED 0 DRAIN TO SOURCE VOLTAGE (V) DS ...

Page 5

Typical Characteristics 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 2000 1000 C C RSS GD 100 OSS ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 16. Unclamped Energy Test Circuit g(REF) Figure 18. Gate Charge Test Circuit V GS ...

Page 7

Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, T thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, P application. Therefore the o temperature C), and thermal resistance R A ...

Page 8

PSPICE Electrical Model .SUBCKT HUFA76413DK8T 7.8e- 9.8e-10 CIN 6 8 5.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 67.4 EDS ...

Page 9

SABER Electrical Model REV April 2002 template HUFA76413DK8T n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 8e-13 1.58e-2, trs1 = 1e-3, trs2 = 3e-6, xti = 3.2, cjo = 8e-10 3.2e-8, m ...

Page 10

SPICE Thermal Model REV April 2002 HUFA76413DK8T 2 Copper Area = 0.493in CTHERM1 th 8 8.5e-4 CTHERM2 8 7 1.8e-3 CTHERM3 7 6 5.0e-3 CTHERM4 6 5 1.3e-2 CTHERM5 5 4 4.0e-2 CTHERM6 4 3 1.5e-1 CTHERM7 3 2 7.5e-1 ...

Page 11

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ FRFET Auto-SPM™ Build it Now™ Global ...

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