IXFN38N100Q2_08 IXYS [IXYS Corporation], IXFN38N100Q2_08 Datasheet - Page 4

• Manufacturer Part Number: IXFN38N100Q2_08
• Description: HiPerFET Power MOSFET
• Manufacturer: IXYS [IXYS Corporation]

IXYS reserves the right to change limits, test conditions, and dimensions.
1 00000
1 0000
1 000
1 00
60
55
50
45
40
35
30
25
20
90
80
70
60
50
40
30
20
1 5
1 0
1 0
5
0
0
3.0
0.2
0
Fig. 9. Source Current vs. Source-To-
f = 1 MHz
5
3.5
0.4
Fig. 11. Capacitance
Fig. 7. Input Admittance
1 0
4.0
T
Drain Voltage
J
T
= 1 25
1 5
V
J
V
0.6
C
= 1 25
V
SD
C
GS
rss
- 40
DS
oss
25
º
C
- Volts
C
- Volts
iss
4.5
º
º
º
- Volts
20
C
C
C
0.8
25
5.0
T
J
30
= 25
1 .0
5.5
º
C
35
6.0
1 .2
40
1 .000
0.1 00
0.01 0
0.001
80
70
60
50
40
30
20
0.0001
1 0
1 0
0
8
6
4
2
0
0
0
Fig. 12. Maximum Transient Thermal
V
I
I
D
G
DS
= 1 9A
= 1 0mA
1 0
Fig. 8. Transconductance
= 500V
0.001
50
Fig. 10. Gate Charge
Pulse Width - Seconds
20
Q
Impedance
G
0.01
I
1 00
- nanoCoulombs
D
30
IXFN38N100Q2
- Amperes
40
0.1
1 50
IXYS REF: F_38N100Q2(95)5-27-08-B
1 25
T
º
C
50
J
= - 40
25
200
º
1
C
º
60
C
250
1 0
70