IXFN56N90P_11 IXYS [IXYS Corporation], IXFN56N90P_11 Datasheet - Page 4

• Manufacturer Part Number: IXFN56N90P_11
• Description: Polar HiPerFET Power MOSFET
• Manufacturer: IXYS [IXYS Corporation]

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
10
0
0
0.3
4.5
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5.0
5
0.5
5.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
T
6.0
J
15
= 125ºC
V
GS
V
0.7
SD
V
- Volts
DS
- Volts
6.5
20
T
- Volts
J
= 125ºC
0.8
- 40ºC
25ºC
7.0
25
T
0.9
J
= 25ºC
7.5
30
1.0
C oss
C iss
C rss
8.0
35
1.1
1.2
40
8.5
0.001
0.01
90
80
70
60
50
40
30
20
10
10
0.1
0
9
8
7
6
5
4
3
2
1
0
0.0001
1
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 28A
= 10mA
10
= 450V
50
0.001
20
100
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
Pulse Width - Seconds
150
Q
I
0.01
D
G
- Amperes
- NanoCoulombs
40
200
IXFN56N90P
50
0.1
250
T
60
J
= - 40ºC
300
70
25ºC
125ºC
IXYS REF: F_56N90P(99)10-24-08
1
350
80
400
90
10