IXFN64N50P_09 IXYS [IXYS Corporation], IXFN64N50P_09 Datasheet - Page 4

• Manufacturer Part Number: IXFN64N50P_09
• Description: Polar Power MOSFET HiPerFET
• Manufacturer: IXYS [IXYS Corporation]

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
240
220
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
100
80
60
40
20
0
10
0
3.0
0.3
0
0.4
f
= 1 MHz
3.5
5
0.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.0
T
C rss
Fig. 11. Capacitance
J
= 125ºC
0.7
Intrinsic Diode
15
V
V
V
0.8
GS
4.5
SD
DS
C oss
T
- Volts
- Volts
J
- Volts
0.9
= 125ºC
20
T
- 40ºC
J
25ºC
5.0
1.0
= 25ºC
C iss
25
1.1
5.5
1.2
30
1.3
6.0
35
1.4
1.5
6.5
40
1.000
0.100
0.010
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0.001
0
0
V
I
I
D
G
DS
= 32A
= 10mA
20
Fig. 12. Maximum Transient Thermal
20
= 250V
Fig. 8. Transconductance
0.01
40
40
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
I
60
- NanoCoulombs
D
Impedance
- Amperes
60
80
0.1
T
J
IXFN64N50P
= - 40ºC
80
125ºC
25ºC
100
100
120
1
IXYS REF: F_64N50P(9J)4-27-09
120
140
140
160
10