IRFP32N50K_04 IRF [International Rectifier], IRFP32N50K_04 Datasheet

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IRFP32N50K_04

Manufacturer Part Number
IRFP32N50K_04
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet
Thermal Resistance
Benefits
l
l
l
l
Applications
l
l
l
l
Avalanche Characteristics
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Symbol
E
I
E
Symbol
R
R
R
D
D
AR
www.irf.com
DM
J
STG
D
GS
AS
AR
θJC
θCS
θJA
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@ T
@ T
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Low R
@T
Circuits
C
C
C
= 25°C
= 100°C
= 25°C
DS(on)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
(1.6mm from case )
Parameter
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
Typ.
Typ.
0.24
–––
–––
–––
–––
–––
-55 to + 150
HEXFET Power MOSFET
IRFP32N50K
Max.
130
460
± 30
300
3.7
32
20
13
R
DS(on)
0.135Ω
TO-247AC
Max.
Max.
typ.
0.26
450
–––
32
46
40
10lb*in (1.1N*m)
Units
W/°C
V/ns
°C
W
A
V
Units
Units
°C/W
32A
mJ
mJ
I
A
D
10/19/04
1

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IRFP32N50K_04 Summary of contents

Page 1

Applications Switch Mode Power Supply (SMPS Uninterruptible Power Supply High Speed Power Switching l Hard Switched and High Frequency l Circuits Benefits Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and Dynamic l ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss 10 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.01 ...

Page 6

TOP 640 BOTTOM 480 320 160 100 Starting T , Junction Temperature ( C) J Fig 12a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U.T. V ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ - • • • • ...

Page 8

EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California ...

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