IRFP4232PBF_07 IRF [International Rectifier], IRFP4232PBF_07 Datasheet - Page 4

• Manufacturer Part Number: IRFP4232PBF_07
• Description: Advanced process technology
• Manufacturer: IRF [International Rectifier]

IRFP4232PbF
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 11. Maximum Drain Current vs. Case Temperature
1600
1400
1200
1000
4
12000
10000
800
600
400
200
8000
6000
4000
2000
0
60
54
48
42
36
30
24
18
12
6
0
0
25
Fig 7. Typical E
25
1
L = 220nH
Coss
Crss
C= 0.4µF
C= 0.3µF
C= 0.2µF
Ciss
50
50
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T C , CaseTemperature (°C)
Temperature (°C)
75
10
75
PULSE
100
f = 1 MHZ
vs.Temperature
100
125
100
125
150
150
1000
175
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
1000.0
1000
100.0
100
10.0
0.1
10
1.0
0.1
20
16
12
1
8
4
0
0.2
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
V DS , Drain-to-Source Voltage (V)
40
V SD , Source-to-Drain Voltage (V)
0.4
T J = 175°C
Q G Total Gate Charge (nC)
80
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 200V
VDS= 125V
VDS= 50V
0.6
120
T J = 25°C
160
100µsec
0.8
100
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200
V GS = 0V
1.0
10µsec
1µsec
240
1000
280
1.2