KA236-2.5 SAMSUNG [Samsung semiconductor], KA236-2.5 Datasheet
KA236-2.5
Related parts for KA236-2.5
KA236-2.5 Summary of contents
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... Low temperature coefficient Guaranteed temperature stability 4mV typical Î 0.2 dynamic impedance 1.0% initial tolerance available. Easily trimmed for minimum temperature drift SCHEMATIC DIAGRAM PROGRAMMABLE SHUNT REGULATOR Î dynamic impedance. ORDERING INFORMATION Device KA336-2.5 KA336-2.5B KA236-2.5 TO-92 1: ADJ Package Operating Temperature & TO-92 & +85 ...
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... KA336-2.5/B/KA236-2.5 ABSOLUTE MAXIMUM RATINGS Characteristic Reverse Current Forward Current Operating Temperature Range KA336-2.5/B KA236-2.5 Storage Temperature Range ELECTRICAL CHARACTERISTICS Characteristic Symbol Reverse Breakdown Voltage V R º º Reverse Breakdown Change with Current Reverse Dynamic Impedance Z D Temperature Stability ST T º ...
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... KA336-2.5/B/KA236-2.5 TYPICAL PERFORMANCE CHARACTERISTICS Fig. 1. REVERSE VOLTAGE CHANGE REVERSE CURRENT (mA) Fig. 3 TEMPERATURE DRIFT PROGRAMMABLE SHUNT REGULATOR Fig. 2 REVERSE CHARACTERISTICS REVERSE VOLTAGE(V) Fig. 4 FORWARD CHARACTERISTICS ...
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... KA336-2.5/B/KA236-2.5 PROGRAMMABLE SHUNT REGULATOR ...