ATF-10100-GP3 HP [Agilent(Hewlett-Packard)], ATF-10100-GP3 Datasheet
ATF-10100-GP3
Related parts for ATF-10100-GP3
ATF-10100-GP3 Summary of contents
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... DS • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical GHz 1 dB Description The ATF-10100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor Electrical Specifications Symbol Parameters and Test Conditions NF Optimum Noise Figure: V ...
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... Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number ATF-10100-GP3 ATF-10100 Noise Parameters: Freq GHz dB 1.0 0.4 2.0 0.4 4.0 0.55 6.0 0.8 8.0 1.0 ATF-10100 Typical Performance ...
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Typical Scattering Parameters, Freq MHz Mag. Ang. 1.0 .93 -46 17.7 2.0 .83 -78 15.6 3.0 .78 -94 13.9 4.0 .72 -104 12.4 5.0 .70 -120 11.2 6.0 .68 -139 10.0 7.0 .71 -157 8.0 .72 168 9.0 ...
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... ATF-10100 Chip Dimensions 218 m 8.58 mil 218 m 8.58 mil 1.26 mil 218 m 8.58 mil 304 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. 163 m 6.42 mil 279 mil 5-22 ...