ATF-13100-GP3 HP [Agilent(Hewlett-Packard)], ATF-13100-GP3 Datasheet
ATF-13100-GP3
Related parts for ATF-13100-GP3
ATF-13100-GP3 Summary of contents
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... Typical at 12 GHz • High Output Power: 17.5 dBm Typical GHz 1 dB Description The ATF-13100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applica- tions in the 2-18 GHz frequency range ...
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... V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number ATF-13100-GP3 ATF-13100 Noise Parameters: Freq GHz dB 4.0 0.4 6.0 0.7 8.0 0.8 12.0 1.1 16.0 1.5 ATF-13100 Typical Performance ...
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... A model for this device is available in the DEVICE MODELS section. ATF-13100 Chip Dimensions 356 m 14 mil 50 m 1.97 mil D 118 m 4.65 mil 254 mil 1.97 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. ...