MAAM12022 MA-COM [M/A-COM Technology Solutions, Inc.], MAAM12022 Datasheet - Page 2

• Manufacturer Part Number: MAAM12022
• Description: GaAs MMIC Low Noise Amplifier SOIC-8 Platform
• Manufacturer: MA-COM [M/A-COM Technology Solutions, Inc.]

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GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Application Note
M540
MMIC LNA Product Design and
Performance Features
The GaAs MMIC LNAs discussed in this application note
were carefully designed, considering not only the electri-
cal specifications but also ease and cost of manufactur-
ing as well as quality and reliability. The following three
subsections discuss in detail the inner workings of these
MMIC LNAs in terms of circuit design, manufacturing,
and quality.
The present MMIC LNA product family consists of the
following products:
Part #
AM50-0002
MAAM12021 GPS, PDC
MAAM12022 GPS, PDC
MAAM12031 PCN, PCS,
MAAM12032 PCN, PCS
MAAM22010 ISM, WLAN
AM50-0001
All these products are offered in industry standard
(JEDEC) SOIC-8 narrow body plastic packages.
TACS
PHS, DECT
DCS-1800
AMPS,
GPS, PDC
GSM,
DCS-1800 Noise Figure:
PHS, DECT
Intended
Market
Noise Figure:
Noise Figure:
Noise Figure:
Noise Figure:
Noise Figure:
Noise Figure:
Frequency:
Frequency:
Frequency:
Frequency:
Output IP3:
Frequency:
Frequency:
Frequency:
Gain:
Gain:
Gain:
Gain:
Gain:
Gain:
Bias: 3-5V @ 20 mA
Bias: 3-5V @ 8 mA
Bias: 3-5 V @ 5 mA
Bias: 3-5 V @ 8 mA
Gain:
Bias: 5 V @ 50 mA
Bias: 3-5 V @ 5 mA
Features
Bias: 3-5 V @ 5 mA
0.8-1.0 GHz
1.7-2.0 GHz
1.7-2.0 GHz
1.5-1.6 GHz
1.5-1.6 GHz
2.4-2.5 GHz
1.575 GHz
+30 dBm
1.15 dB
1.55 dB
1.85 dB
1.65 dB
1.5 dB
1.8 dB
1.9 dB
27 dB
21 dB
14 dB
20 dB
13 dB
14 dB
14 dB
MMIC Electrical Design Considerations
The key to any IC design is a well modeled stable
process to predict circuit performance. The MMIC LNAs
are based on M/A-COM’s mature 0.5-micron (μm) low
noise GaAs MESFET process. The active layer of the
GaAs substrate is formed using ion-implantation for high
throughput and low cost.
combined
performance MESFET’s; the f
and the F
respectively. Every wafer is characterized for DC and
RF performance. Process control parameters, as well as
MIM capacitance, thin film resistance, and FET RF
equivalent circuit, are stored in a database. From this
database, a statistical circuit model is derived for
designers to use in optimizing their design for maximum
yield.
Another critical aspect in the success of this MMIC LNA
product family is the ability to model all aspects of the
product
environment.
encapsulant on the electrical performance of the die for
both the FETs and spiral inductors was a significant
challenge. No less a challenge was the electrical circuit
modeling of the SOIC-8 package itself in terms of the self
and mutual inductances of the leads, bond wires, and
split paddle lead frame.
This extensive modeling of the MMIC elements (FETs,
MIM capacitors, thin film resistors, and spiral inductors),
bond wires, and plastic package effects has allowed M/
A-COM to predict with high confidence the performance
of these and other designs. Utilizing these models with
our statistical design methodology has allowed us to
achieve high performance, unconditionally stable LNAs
with high yield and, therefore, low cost. Figures 1 and 2
show the statistical distribution of the gain and noise
figure, respectively, for the MAAM12021.
In this product platform there are essentially two circuit
design types, a low gain (LG) and a high gain (HG). The
LG design (MAAM12022, MAAM12032, MAAM22010,
and AM50-0001), shown in Figure 3, employs a single
stage cascade configuration with series feedback to
simultaneously achieve impedance match and minimum
noise figure.
MAAM12031), shown in Figure 4, uses two cascaded
common source stages biased in series to achieve the
high gain at low current consumption, and also employs
series feedback to simultaneously achieve impedance
match and minimum noise figure.
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min
performance
with
and G
Quantifying the impact of the plastic
The HG design (MAAM12021 and
0.5-μm
max
at 12 GHz are 1.3 and 13 dB,
in
T-gates
A “buried-p” doping layer
T
the
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of the process is 30 GHz
plastic
results
packaging
in
Rev. V3
high