MAAM26100-B1G MA-COM [M/A-COM Technology Solutions, Inc.], MAAM26100-B1G Datasheet
MAAM26100-B1G
Manufacturer Part Number
MAAM26100-B1G
Description
GaAs MMIC Power Amplifier 3.0 - 6.4 GHz
Manufacturer
MA-COM [M/A-COM Technology Solutions, Inc.]
Datasheet
1.MAAM26100-B1G.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MAAM26100-B1G
Manufacturer:
MA/COM
Quantity:
5 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
GaAs MMIC Power Amplifier
3.0 - 6.4 GHz
Features
• Saturated Power: 30.5 dBm Typical
• Gain: 19 dB Typical
• Power Added Efficiency: 30%
• DC Decoupled RF Input and Output
• Lead-Free 7-Lead Ceramic Package
• RoHS* Compliant and 260°C Reflow Compatible
Description
The MAAM26100-B1 is a GaAs MMIC two stage
high
lead-free,
MAAM26100-B1 is a fully monolithic design which
eliminates the need for external circuitry in 50-ohm
systems.
The MAAM26100-B1 is ideally suited for driver
amplifiers
applications, test equipment, electronic warfare
jammers, missile subsystems and phased array
radars.
The MAAM26100-B1 is fabricated using a mature
0.5-micron gate length GaAs process. The process
features
performance reliability.
Absolute Maximum Ratings
1. Exceeding any one or combination of these limits may cause
2. M/A-COM does not recommend sustained operation near
MAAM26100-B1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
permanent damage to this device and will void product
warranty.
these survivability limits.
Channel Temperature
Storage Temperature
RF Input Power
efficiency
Parameter
V
V
and
full
GG
DD
7-lead
transmitter
power
passivation
ceramic
amplifier
Absolute Maximum
outputs
-65°C to +150°C
package.
-6 V to -3 V
for
+17 dBm
1,2
150°C
+9 V
in
increased
in
a
UMTS
small,
The
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Pin Configuration
Functional Diagram
3. Nominal bias is obtained by first connecting –5 volts to pin 1
4. RF ground and thermal interface are the case bottom.
Ordering Information
Pin No.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
(V
(V
Adequate heat sinking is required.
RF
IN
Visit www.macomtech.com for additional data sheets and product information.
GG
D2
1
2
3
4
MAAM26100-B1G
). Note sequence.
MAAM26100-B1
), followed by connecting +8 volts to pin 5 (V
Part Number
7
Internal Ground
RF Output
Function
V
V
GG
D2
1000 pF
6
5
V
1
DD
V
3,4
GG
Pin No.
• China Tel: +86.21.2407.1588
7 lead, Ceramic (CR-2)
7 lead, Ceramic (CR-2)
1000 pF
4
5
6
7
with Gull Wing
3
Package
Internal Ground
Function
RF Input
D1
2
) and pin 4
V
D1
Rev. V6
OUT
RF
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MAAM26100-B1G Summary of contents
Page 1
... Ordering Information Part Number MAAM26100-B1 MAAM26100-B1G • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice ...
Page 2
... MAAM26100-B1 GaAs MMIC Power Amplifier 3.0 - 6.4 GHz Electrical Specifications: T Parameter Small Signal Gain Input VSWR Output VSWR Saturated Output Power Output Power Gain Compression Power Added Efficiency Third Order Intercept Reverse Isolation I DSQ Thermal Resistance 5. Attachment method not included. ...