RU8205C6 RUICHIPS [Ruichips Semiconductor Co., Ltd], RU8205C6 Datasheet - Page 2

• Manufacturer Part Number: RU8205C6
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A– NOV., 2011
Static Characteristics
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
R
Symbol
BV
V
DS(ON)
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
t
t
oss
rss
iss
DSS
gd
r
f
gs
G
g
③
③
②When mounted on 1 inch square copper board, t 10sec.
③Pulse test ; Pulse width 300 s, duty cycle 2%.
④Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Diode Forward Voltage
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
④
④
(T
A
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
V
V
=25°C Unless Otherwise Noted)
SD
DS
DS
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
GS
=1A, V
=6A, V
=6
=6A
=10V,
=10V, R
=16V, V
=0V,V
=0V,
=20V, V
=V
=0V, I
=±10V, V
=4.5V, I
=2.5V, I
2
Test Condition
GS
, I
GS
GEN
DS
DS
DS
=0V
GS
DS
DS
=0V,F=1MHz
L
=250 A
GS
=1.7 ,
=4.5V,
=250 A
DS
=4.5V,
=6A
=5A
=0V
=0V
T
J
=85°C
Min.
0.5
20
RU8205C6
Typ.
580
120
1.5
3.4
1.8
10
95
11
38
13
0.7
22
30
5
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RU8205C6
Max.
±100
14
1.5
30
40
30
1
1
Unit
m
m
nC
nA
pF
ns
V
V
V
A