RU2013H RUICHIPS [Ruichips Semiconductor Co., Ltd], RU2013H Datasheet - Page 2

• Manufacturer Part Number: RU2013H
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A– AUG., 2011
Static Characteristics
R
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
Symbol
DS(ON)
BV
V
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
Q
t
t
t
oss
rss
rr
iss
DSS
gd
r
f
gs
G
rr
g
③
③
②When mounted on 1 inch square copper board, t 10sec.
③Pulse test ; Pulse width 300 s, duty cycle 2%.
④Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
④
④
(T
A
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
V
V
V
=25°C Unless Otherwise Noted)
SD
SD
DS
DS
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
GS
GS
=1A, V
=10A, dl
=10A, V
=6
=10A
=10V,
=10V, R
=16V, V
=0V,V
=0V,
=20V, V
=V
=0V, I
=±12V, V
= 10V, I
= 4.5V, I
= 2.5V, I
2
Test Condition
GS
, I
GS
DS
DS
DS
GEN
SD
=0V
GS
DS
=0V,F=1MHz
L
=250 A
GS
DS
DS
=1 ,
=250 A
/dt=100A/ s
DS
=4.5V,
=10A
=10V,
=0V
=8A
=6A
=0V
T
J
=85°C
Min.
0.5
20
RU2013H
Typ.
580
124
2.1
1.2
12
65
11
19
0.8
13
16
22
9
3
9
4
8
www.ruichips.com
RU2013H
Max.
±100
12
1.5
16
20
26
30
1
1
Unit
m
m
m
nC
nC
nA
pF
ns
ns
V
V
V
A