K6X1008T2D-B Samsung semiconductor, K6X1008T2D-B Datasheet - Page 7

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K6X1008T2D-B

Manufacturer Part Number
K6X1008T2D-B
Description
128Kx8 bit Low Power CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet

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K6X1008T2D Family
TIMING WAVEFORM OF WRITE CYCLE(1)
TIMING WAVEFORM OF WRITE CYCLE(2)
Address
CS
CS
WE
Data in
Data out
Address
CS
CS
WE
Data in
Data out
1
2
1
2
Data Undefined
High-Z
t
t
AS(3)
AS(3)
(CS
(WE Controlled)
1
Controlled)
t
WHZ
7
t
AW
t
AW
t
t
WC
CW(2)
t
CW(2)
t
t
WC
CW(2)
t
WP(1)
t
WP(1)
t
t
DW
DW
Data Valid
Data Valid
t
WR(4)
t
WR(4)
t
t
DH
DH
t
OW
High-Z
CMOS SRAM
September 2003
Revision 1.0

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