STD1LNK60Z-1 STMICROELECTRONICS [STMicroelectronics], STD1LNK60Z-1 Datasheet - Page 3

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STD1LNK60Z-1

Manufacturer Part Number
STD1LNK60Z-1
Description
N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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0
ELECTRICAL CHARACTERISTICS (T
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
I
I
I
C
SD
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
GSS
fs
RRM
RRM
DSS
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
r
gs
gd
f
(1)
rr
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
T
V
V
V
V
V
V
V
R
(see Figure 21)
V
V
(see Figure 25)
I
I
V
(see Figure 23)
I
V
(see Figure 23)
D
SD
SD
SD
C
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
DD
DD
G
= 1 mA, V
= 125 °C
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7 V
= 0.8A, V
= 0.8 A, di/dt = 100A/µs
= 0.8 A, di/dt = 100A/µs
= 25V, f = 1 MHz, V
= Max Rating
= Max Rating,
= ± 20V
= V
= 10V, I
= V
= 0V, V
= 300V, I
= 480V, I
= 10V
= 20V, T
= 20V, T
Test Conditions
Test Conditions
Test Conditions
,
GS
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
I
D
, I
= 0.4 A
DS
D
GS
D
GS
GS
j
j
D
D
= 25°C
= 150°C
= 0.4 A
= 50 µA
= 0V to 480V
= 0.4 A
= 0.8 A,
= 0
= 10 V
= 0
GS
= 0
Min.
Min.
Min.
600
3
oss
when V
Typ.
3.75
Typ.
17.6
Typ.
135
216
140
224
0.5
2.8
5.5
4.9
2.7
3.2
3.2
13
94
13
28
11
5
1
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
6.9
0.8
2.4
1.6
50
15
1
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
nC
nC
3/14
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A

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