STPS40L45C-Y STMICROELECTRONICS [STMicroelectronics], STPS40L45C-Y Datasheet - Page 3

• Manufacturer Part Number: STPS40L45C-Y
• Description: 7Automotive power Schottky rectifier
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STPS40L45C-Y
Figure 1.
Figure 3.
Figure 5.
16
14
12
10
0.001
250
225
200
175
150
125
100
8
6
4
2
0
0.01
75
50
25
0.1
1E-3
0
0
1
0.01
P F(AV) (W)
P
I M (A)
P
ARM
ARM
2
(1 µs)
(t p )
4
δ = 0.05
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
6
1E-2
8
δ = 0.1
10
1
t(s)
I F(AV) (A)
12
δ = 0.2
14
10
1E-1
16
δ = 0.5
18
100
δ = t p / T
Tc = 125 °C
20
Tc = 25 °C
Tc = 75 °C
Doc ID 023224 Rev 1
t (µs)
δ = 1
T
p
22
1E+0
t p
1000
24
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
22
20
18
16
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
1
0
8
6
4
2
0
25
1E-4
0
P
I F(AV) (A)
ARM
δ = 0.2
δ = 0.1
δ = t p / T
P
Z th(j-c) /R th(j-c)
δ = 0.5
ARM
Single pulse
(25 °C)
(T )
j
T
25
50
Average forward current versus
ambient temperature
(
t p
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
δ
1E-3
R th(j-a) = 15 °C/W
= 0.5, per diode)
50
R th(j-a) = R th(j-c)
75
T amb (°C)
t p (s)
1E-2
75
100
100
Characteristics
1E-1
δ = t p / T
125
125
T
T (°C)
j
t p
1E+0
150
150
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